MSK3020 MSK | Alldatasheet

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Technical content

Source 2, 3 Source Q1 Sense Q3 Drain 1, 2 Gate Q3 Gate Q2

10 Drain 3, 4

11 Gate Q4

Kelvin Source 2, 3

12 Source 4

  • Pin Compatible with MPM3002 and MPM3012
  • P and N Channel MOSFETs for Ease of Drive
  • N Channel Current Sensing MOSFET for Lossless Sensing
  • Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
  • Avalanche Rated Devices
  • 100 Volt, 10 Amp Full H-Bridge 4707 Dey Road Liverpool, N.Y. 13088 (315) 701-6751 H-BRIDGE MOSFET POWER MODULE EQUIVALENT SCHEMATIC DESCRIPTION: The MSK 3020 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3020 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The N Channel MOSFETS are current sensing to allow lossless current sensing for current controlled applications. The MSK 3020 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3020 is pin compatible with the MPM3002 and MPM3012 with some differences in specifications. FEATURES: Rev. A 7/00 TYPICAL APPLICATIONS
  • Stepper Motor Servo Control
  • Disk Drive Head Control
  • X-Y Table Control
  • Az-El Antenna Control PIN-OUT INFORMATION ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. 3020

1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. Resistance as seen at package pins. Resistance for die only; use for thermal calculations. TA = 25°C unless otherwise specified. NOTES: VDSS MAX VDGDR Drain to Gate Voltage VGS Gate to Source Voltage ID IDM RTH-JC Thermal Resistance IM MAX IMM MAX Rev. A 7/00 ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Single Pulse Avalanche Energy TJ TST to C TC Case Operating Temperature Range .... -55°C to C TLD Lead Temperature Range Parameter Test Conditions 4 Drain-Source Breakdown Voltage Drain-Mirror Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source on Resistance Drain-Source on Resistance Forward Transconductance N-CHANNEL (Q2, Q3) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time 1 Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 1 Output Capacitance of Sensing Cells 1 Current Sensing Ratio 1 P-CHANNEL (Q1, Q4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time 1 Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 1 BODY DIODE Forward on Voltage Reverse Recovery Time Reverse Recovery Charge IS = 14A VGS = 0V (Q2, Q3) IS = -14A VGS = 0V (Q1, Q4) IS = 14A di/dt = 100A/µS (Q2, Q3) IS = -8.4A di/dt = 100A/µS (Q1, Q4) IS = 14A di/dt = 100A/µS (Q2, Q3) IS = -8.4A di/dt = 100A/µS (Q1, Q4) VGS = 0V VDS = -25V f = 1 MHz VDD = -50V ID = -8.4A RG = 9.1W RD = 6.2W ID = -8.4A VDS = -80V VGS = -10V VGS = 10V ID = 14A VGS = 0V VDS = 25V f = 1 MHz VDD = 50V ID = 14A RG = 12W RD = 3.5W ID = 14A VDS = 80V VGS = 10V VGS = 0 ID = 0.25 mA (All Transistors) VGS = 0 VDS = 100V, (Q2, Q3) VDS = 100V VGS = 0V, (Q2, Q3) VDS = -100V VGS = 0V, (Q1, Q4) VGS = ±20V VDS = 0V (All Transistors) VDS = VGS ID = 250 µA (Q2, Q3) VDS = VGS ID = 250 µA (Q1, Q4) VGS = 10V ID = 8.4A (Q2, Q3) VGS = -10V ID = -8.4A (Q1, Q4) VGS = 10V ID = 8.4A (Q2, Q3) VGS = -10V ID = -8.4A (Q1, Q4) VDS = 50V ID = 8.4A (Q2, Q3) VDS = -50V ID = -8.4A (Q1, Q4) 100 100 2.0 -2.0 4.7 3.2 1390 9.5 700 320 -25 ±100 4.0 -4.0 0.26 0.31 0.16 0.20 5.5 1540 2.5 -1.6 150 0.85 650 310 1.2 970 V V nS nS µC nC 760 260 170 8.3 nC nC nC nS nS nS nS pF pF pF V V µA µA nA V V W W W W S S nC nC nC nS nS nS nS pF pF pF pF r Units Typ. Max. Min. MSK 3020

Rev. A 7/00 USING CURRENT SENSING MOSFETS: A MOSFET transistor is constructed of many individual MOSFET cells connected in parallel. They share the current total very evenly. If one of these cells are brought out to a pin, that cell will pass an accurate proportional amount of the total current. This current can be used as a low power sense of the whole current without passing that whole current through a sensing device like a resistor. This small current multiplied by the ratio specified on the data sheet equals the whole current. There are several methods of working with the sense function to obtain the actual current. Virtual Earth Sensing The disadvantage is amplifying a current swing of 10 amps in 100 nSec to produce a 5V output means the op amp has to slew 50V/µSec. This is beyond the capabilities of a lot of op amps. Resistor Sensing The disadvantage is RT voltage must be above the offset voltage of the op amp and RT must be much less than RDS(ON) of the sensing cell or temperature shifts will affect accuracy. APPLICATION NOTES, CONT.

TYPICAL PERFORMANCE CURVES Rev. A 7/00

The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. MECHANICAL SPECIFICATIONS Rev. A 7/00 M.S. Kennedy Corp.

4707 Dey Road, Liverpool, New York 13088

Phone (315) 701-6751 FAX (315) 701-6752 www.mskennedy.com

ORDERING INFORMATION

TORQUE SPECIFICATION 3 TO 5 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED. ALL DIMENSIONS ARE ±0.010 INCHES UNLESS OTHERWISE SPECIFIED.