MSB6N70 BWTECH | Alldatasheet
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MSB6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 GENERAL DESCRIPTION The MSB6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. FEATURES • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant / Halogen free package available
MSB6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 td(ON) - 10 30 tr - 35 80 td(OFF) - 45 100 tf VDS =350V,ID =5.5A, RG = 25 Ω - 40 90 ns
MSB6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
MSB6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
MSB6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 Package Dimensions Dimensions in Millimeters
MSB6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013