MSB30B HDSEMI | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
Polarity: Color band denotes cathode Glass passivated chip ● MB30X H igh Diode Semiconductor UMSB Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications UMSB MSB30B THRU MSB30M Item Symbol Unit Conditions MSB30 Repetitive Peak Reverse Voltage V RRM V Average Rectified Output Current I O A 60Hz sine wave, R-load, Tc=110℃ Surge(Non- repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T j =25℃ Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 37.45 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150
Electrical Characteristics
a =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =1.5A, Pulse measurement, Rating of per diode 1.1 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode Tj=25℃ Tj=125℃ 100 Thermal Resistance R θ J-A ℃/W Between junction and ambient 55 R θ J-L Between junction and lead 15 R θ J-C Between junction and case 10 B D G J K M 100 200 400 600 800 1000
H igh Diode Semiconductor 0.5 Io(A) Tc( FIG1:Io-Tc Curve 16040 80 120 1.0 1.5 2.0 2.5 3.0 0.01 0.02 0.05 VF(V) IF(A) FIG3: Forward Voltage 0.1 0.5 Ta=25 0 20 40 60 80 100 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=125 Tj=25 FIG4:Typical Reverse Characteristics IFSM(A) 2 5 10 20 50 100 sine wave non-repetitive Tj=25 FIG2:Surge Forward Current Capadility Number of Cycles 8.3ms 1cycle IFSM 8.3ms 105
H igh Diode Semiconductor UMSB .079(2.00) .071(1.80) .280(7.10 .360(9.15) V A M C E ∠ALL ROUND D b L e A UNIT mm 1.5 0.29 8.9 1.3 0.17 8.4 10° max min mil max min 350 331 A C D E E1 ∠e 1.15 0.95 b 5.3 4.9 209 193 7.6 7.1 299 280 7.0 6.2 276 244 L 1.6 1.0 UMSB mechanical data UMSB f f 0.6 0.8 31.5