MSA-0736 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50Ω Gain Block
  • Low Operating Voltage: 4.0 V Typical V d
  • 3 dB Bandwidth: DC to 2.4 GHz
  • 13.0 dB Typical Gain at 1.0 GHz
  • Unconditionally Stable (k>1)
  • Cost Effective Ceramic Microstrip Package

Description

The MSA-0736 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Avago’s 10 GHz f

25 GHz fMAX, silicon bipolar MMIC process which uses

nitride self-alignment, ion implantation, and gold met- allization to achieve excellent performance, unifor- mity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration Cblock Cblock Rbias VCC > 5 V Vd = 4.0 V RFC (Optional) IN OUT MSA 36 micro-X Package

Parameter Absolute Maximum [1] Device Current 60 mA Power Dissipation[2,3] 275 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 6.5 mW/ °C for TC > 157°C. 4. Storage above +150 °C may tarnish the leads of this package making it difficult to solder into a circuit. 5. Ths small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. GP Power Gain (|S21|2) f = 0.1 GHz dB 12.5 13.5 14.5 ∆GP Gain Flatness f = 0.1 to 1.3 GHz dB ±0.6 ±1.0 f3 dB 3 dB Bandwidth GHz 2.4 Input VSWR f = 0.1 to 2.5 GHz 2.0:1 Output VSWR f = 0.1 to 2.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5 P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 19.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage V 3.6 4.0 4.4 dV/dT Device Voltage Temperature Coefficient mV/ °C –7.0 Note: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 22 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

Ordering Information

Part Numbers No. of Devices Comments MSA-0736-BLKG 100 Bulk MSA-0736-TR1G 1000 7" Reel

Figure 1. Typical Power Gain vs.

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency.

36 micro-X Package Dimensions 1 3 SOURCE SOURCE DRAIN GATE 2.15 (0.085) 2.11 (0.083) DIA. 0.508 (0.020) 2.54 (0.100) 4.57 ± 0.25 0.180 ± 0.010 0.15 ± 0.05 (0.006 ± 0.002) Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 0.56 (0.022) 1.45 ± 0.25 (0.057 ± 0.010) For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countrie s. Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2741EN AV02-0305EN - April 12, 2007