MSA-0711 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 1.9 GHz
  • 12.0 dB Typical Gain at 1.0 GHz
  • Unconditionally Stable (k>1)
  • Low Cost Surface Mount Plastic Package
  • Tape-and-Reel Packaging Option Available
  • Lead-free Option Available Cblock Cblock Rbias VCC > 5 V Vd = 3.8 V RFC (Optional) IN OUTMSA

Description

The MSA-0711 is a low cost silicon bipolar Monolithic Mi- crowave Integrated Circuit (MMIC) housed in the surface mount plastic SOT-143 package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical ap- plications include narrow and broad band IF and RF am- plifiers in commercial and industrial applications. The MSA-series is fabricated using Avago’s 10 GHz fT,

25 GHz fMAX, silicon bipolar MMIC process which uses ni-

tride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temper- ature and current stability also allows bias flexibility. Pin Connections and Package Marking Notes: Top View. Package Marking provides orientation and identification. "x" is the date code. A07x

Thermal Resistance[2]: θjc = 505°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 2.0 mW/°C for TC > 62°C.

Ordering Information

Part Numbers No. of Devices Comments MSA-0711-BLK 100 Bulk MSA-0711-BLKG 100 Bulk MSA-0711-TR1 3000 7" Reel MSA-0711-TR1G 3000 7" Reel MSA-0711-TR2 10000 13" Reel MSA-0711-TR2G 10000 13" Reel Note: Order part number with a “G” suffix if lead-free option is desired. Parameter Absolute Maximum[1] Device Current 50 mA Power Dissipation[2,3] 175 mW RF Input Power +13 dBm Junction Temperature 150°C Storage Temperature –65 to 150°C GP Power Gain (|S 21| 2) f = 0.1 GHz dB 13.0 f = 1.0 GHz 10.0 12.0 ∆GP Gain Flatness f = 0.1 to 1.3 GHz dB ±0.8 f3 dB 3 dB Bandwidth GHz 3.2 Input VSWR f = 0.1 to 2.0 GHz 1.5:1 Output VSWR f = 0.1 to 2.0 GHz 1.5:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 5.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 18.0 tD Group Delay f = 1.0 GHz psec 145 Vd Device Voltage TC = 25°C V 3.0 3.8 4.6 dV/dT Device Voltage Temperature Coefficient mV/°C –7.0 Note: 1. The recommended operating current range for this device is 15 to 30 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

Figure 1. Power Gain vs. Frequency, Id = 22 Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Compression vs. Frequency, Id = 22 mA. Figure 4. Noise Figure vs. Frequency,

2.0 GHz

1.0 GHz

0.1 GHz

C E XXX L D A Notes: XXX-package marking Drawings are not to scale DIMENSIONS (mm) MIN. 0.79 0.013 0.36 0.76 0.086 2.80 1.20 0.89 1.78 0.45 2.10 0.45 MAX. 1.097 0.10 0.54 0.92 0.152 3.06 1.40 1.02 2.04 0.60 2.65 0.69 SYMBOL A B C D e E L GROUND RF INPUT RF OUTPUT AND BIAS GROUND For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-4454EN AV02-0790EN - October 31, 2007