MSA-0470 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50Ω Gain Block
  • 3 dB Bandwidth: DC to 4.0 GHz
  • 12.5 dBm Typical P1 dB at 1.0 GHz
  • 8.5 dB Typical Gain at 1.0 GHz
  • Unconditionally Stable (k>1)
  • Hermetic Gold-ceramic Microstrip Package 70 mil Package

Description

The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Avago’s 10 GHz fT,

25 GHz fMAX, silicon bipolar MMIC process which uses

nitride self-alignment, ion implantation, and gold metal- lization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temper- ature and current stability also allows bias flexibility. Typical Biasing Configuration Cblock Cblock Rbias VCC > 7 V Vd = 5.25 V RFC (Optional) IN OUTMSA

Parameter Absolute Maximum[1] Device Current 100 mA Power Dissipation[2,3] 650 mW RF Input Power +13 dBm Junction Temperature 200°C Storage Temperature –65 to 200°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 8.7 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. GP Power Gain (|S21| 2) f = 0.1 GHz dB 7.5 8.5 9.5 ∆GP Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ±1.0 f3 dB 3 dB Bandwidth GHz 4.0 Input VSWR f = 0.1 to 2.5 GHz 1.7:1 Output VSWR f = 0.1 to 2.5 GHz 2.0:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 25.5 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage V 4.75 5.25 5.75 dV/dT Device Voltage Temperature Coefficient mV/°C –8.0 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency.

0.1 GHz

1.0 GHz

2.0 GHz

.020 .508 .070 1.78 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 mm .040 1.02 .035 .89 .004 ± .002 .10 ± .05

Ordering Information

Part Numbers No. of Devices Comments MSA-0470 100 Bulk For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2764EN AV02-1226EN - May 14, 2008 Typical Performance, TA = 25°C (unless otherwise noted) Gp (dB) Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA.