MSA-0436 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50Ω Gain Block
  • 3 dB Bandwidth: DC to 3.8 GHz
  • 12.5 dBm Typical P1 dB at 1.0 GHz
  • 8.5 dB Typical Gain at 1.0 GHz
  • Unconditionally Stable (k>1)
  • Cost Effective Ceramic Microstrip Package

Description

The MSA-0436 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Avago’s 10 GHz fT,

25 GHz fMAX, silicon bipolar MMIC process which uses

nitride self-alignment, ion implantation, and gold met- allization to achieve excellent performance, unifor- mity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration Cblock Cblock Rbias VCC > 7 V Vd = 5.25 V RFC (Optional) IN OUT MSA 36 micro-X Package

Parameter Absolute Maximum [1] Device Current 100 mA Power Dissipation[2,3] 650 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature[4] –65 to 150°C Thermal Resistance[2,5]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 7.1 mW/ °C for TC > 109°C. 4. Storage above +150 °C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. GP Power Gain (|S 21|2) f = 0.1 GHz dB 7.5 8.5 9.5 ∆GP Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ±1.0 f3 dB 3 dB Bandwidth GHz 3.8 Input VSWR f = 0.1 to 2.5 GHz 1.4:1 Output VSWR f = 0.1 to 2.5 GHz 1.9:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 25.5 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage V 4.75 5.25 5.75 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 50 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

Ordering Information

Part Numbers No. of Devices Comments MSA-0436-BLKG 100 Bulk MSA-0436-TR1G 1000 7" Reel

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency.

0.1 GHz

1.0 GHz

2.0 GHz

2.15 (0.085) 2.11 (0.083) DIA. 0.508 (0.020) 2.54 (0.100) 4.57 ± 0.25 0.180 ± 0.010 0.15 ± 0.05 (0.006 ± 0.002) Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 0.56 (0.022) 1.45 ± 0.25 (0.057 ± 0.010) 36 micro-X Package Dimensions For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countrie s. Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2740EN AV02-0303EN - April 12, 2007