MSA-0311 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 2.3 GHz
  • 11.0 dB Typical Gain at 1.0 GHz
  • 9.0 dBm Typical P1 dB at ‑‑1.0 GHz
  • Unconditionally Stable (k>1)
  • Low Cost Surface Mount Plastic Package
  • Tape ‑and‑Reel Packaging Option Available
  • Lead‑free Option Available

Description

The MSA‑0311 is a low cost silicon bipolar Monolithic Mi‑ crowave Integrated Circuit (MMIC) housed in the surface mount plastic SOT‑143 package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical ap‑ plications include narrow and broad band IF and RF am‑ plifiers in commercial and industrial applications. The MSA‑series is fabricated using Avago’s 10 GHz fT,

25 GHz fMAX, silicon bipolar MMIC process which uses ni‑

tride self‑alignment, ion implantation, and gold metalli‑ zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temper‑ ature and current stability also allows bias flexibility. Typical Biasing Configuration Cblock Cblock Rbias VCC > 7 V Vd = 4.7 V RFC (Optional) IN OUTMSAPin Connections and Package Marking Notes: Top View. Package Marking provides orientation and identification. "x" is the date code. A03x

Thermal Resistance[2]: θjc = 500°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 2.0 mW/°C for TC > 30°C.

Ordering Information

Part Numbers No. of Devices Comments MSA ‑0311‑BLK 100 Bulk MSA ‑0311‑BLKG 100 Bulk MSA ‑0311‑TR1 3000 7" Reel MSA ‑0311‑TR1G 3000 7" Reel MSA ‑0311‑TR2 10000 13" Reel MSA ‑0311‑TR2G 10000 13" Reel Note: Order part number with a “G” suffix if lead‑free option is desired. Parameter Absolute Maximum[1] Device Current 60 mA Power Dissipation[2,3] 240 mW RF Input Power +13 dBm Junction Temperature 150°C Storage Temperature –65 to 150°C Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Units Min. Typ. Max. GP Power Gain (|S 21| 2) f = 0.1 GHz dB 11.5 f = 1.0 GHz 9.0 11.0 ∆GP Gain Flatness f = 0.1 to 1.6 GHz dB ±0.7 f3 dB 3 dB Bandwidth GHz 2.3 Input VSWR f = 0.1 to 3.0 GHz 1.5:1 Output VSWR f = 0.1 to 3.0 GHz 1.7:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 9.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 22.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage TC = 25°C V 3.8 4.7 5.6 dV/dT Device Voltage Temperature Coefficient mV/°C –8.0 Notes: 1. The recommended operating current range for this device is 20 to 40 mA. Typical gain performance as a function of current is on the follow‑ ing page. VSWR

Figure 1. Typical Power Gain vs. Frequency, Id Figure 2. Power Gain vs. Current. Figure 4. Noise Figure vs. Frequency, Id = 35 Figure 3. Output Power at 1 dB Gain Compression vs. Frequency, Id = 35 mA.

0.1 GHz

1.0 GHz

2.0 GHz

C E XXX GROUND RF INPUT RF OUTPUT AND BIAS GROUND L D A Notes: XXX-package marking Drawings are not to scale DIMENSIONS (mm) MIN. 0.79 0.013 0.36 0.76 0.086 2.80 1.20 0.89 1.78 0.45 2.10 0.45 MAX. 1.097 0.10 0.54 0.92 0.152 3.06 1.40 1.02 2.04 0.60 2.65 0.69 SYMBOL A B C D e E L For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-4452EN AV02-0788EN - October 30, 2007