MSA-0300 AVAGO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 2.8 GHz
  • 12.0 dB Typical Gain at 1.0 GHz
  • 10.0 dBm Typical P 1 dB at 1.0 GHz Chip Outline[1] Cblock Cblock R bias VCC > 7 V Vd = 5 V RFC (Optional) IN OUTMSA Note: 1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.

Electrical Specifications[1], TA = 25°C Part Number Ordering Information Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25°C. 3. Derate at 22.2 mW/°C for TC > 181°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Notes: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. G P Power Gain (|S 21 | 2) f = 0.1 GHz dB 12.5 ∆G P Gain Flatness f = 0.1 to 1.8 GHz dB ± 0 . 6 f3 dB 3 dB Bandwidth G Hz 2.8 Input VSWR f = 0.1 to 3.0 GHz 1.8:1 Output VSWR f = 0.1 to 3.0 GHz 1.8:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dB m 10.0 IP 3 Third Order Intercept Point f = 1.0 GHz dB m 23.0 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage V 4 .5 5.0 5 .5 dV/dT Device Voltage Temperature Coefficient m V/ ˚C Ð8.0 Symbol Parameters and Test Conditions [2] : I d = 35 mA, Z O = 50 Ω Units Min. Typ. Max. VSWR Parameter Absolute Maximum [1] Device Current 80 mA Power Dissipation [2,3] 425 mW RF Input Power +13 dBm Junction Temperature 200˚C Storage Temperature -65 to 200 ˚C Thermal Resistance [2,4] : θjc = 45 ˚C/W Part Number Devices Per Tray MSA-0300-GP4 100

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Compression, Figure 4. Output Power at 1 dB Gain Compression vs. Figure 5. Noise Figure vs. Frequency.

  1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright © 006 Avago Technologies Pte. All rights reserved. AV01-003EN - November 1, 007 MSA-0300 Chip Dimensions NOT APPLICABLE INPUT GROUND OPTIONAL OUTPUT [1] 365 µm 14.4 mil 365 µm 14.4 mil Unless otherwise specified, tolerances are Bond Pads are 41µm/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die.