MSA-0270 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50Ω Gain Block
  • 3 dB Bandwidth: DC to 2.8 GHz
  • 12.0 dB Typical Gain at 1.0 GHz
  • Unconditionally Stable (k>1)
  • Hermetic Gold-ceramic Microstrip Package 70 mil Package

Description

The MSA-0270 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration Cblock Cblock Rbias VCC > 7 V Vd = 5 V RFC (Optional) IN OUTMSA

Parameter Absolute Maximum[1] Device Current 60 mA Power Dissipation[,3] 35 mW RF Input Power +13 dBm Junction Temperature 00°C Storage Temperature –65 to 00°C Thermal Resistance[2,4]: θjc = 10°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 8.3 mW/°C for TC > 161°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. GP Power Gain (|S1| ) f = 0.1 GHz dB 11.5 1.5 13.5 ∆GP Gain Flatness f = 0.1 to 1.8 GHz dB ±0.6 ±1.0 f3 dB 3 dB Bandwidth GHz .8 Input VSWR f = 0.1 to 3.0 GHz 1.4:1 Output VSWR f = 0.1 to 3.0 GHz 1.4:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 17.0 tD Group Delay f = 1.0 GHz psec 15 Vd Device Voltage V 4.5 5.0 5.5 dV/dT Device Voltage Temperature Coefficient mV/°C –8.0 Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page. Electrical Specifications [1], TA = 25°C Symbol Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

Figure 1. Typical Power Gain vs. Frequency, Figure 3. Power Gain vs. Current. Figure 6. Noise Figure vs. Frequency. Figure 5. Output Power at 1 dB Gain Compression Figure 2. Device Current vs. Voltage. Figure 4. Output Power at 1 dB Gain Compression, NF

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

Ordering Information

Part Number No. of Devices Comments MSA-070 100 Bulk For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-766EN AV0-13EN May 5, 008 1 3 GROUND GROUND RF OUTPUT AND BIASRF INPUT .020 .508 .070 1.78 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 mm .040 1.02 .035 .89 .004 ± .002 .10 ± .05