MS85N06 BWTECH | Alldatasheet
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Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES ¾3%4 PO .BYƸ !7(4 7¾(BUF$IBSHF 5ZQJDBMO$ ¾*NQSPWFEEWEU$BQBCJMJUZ )JHI3VHHFEOFTT¾"WBMBODIF5FTUFE¾.BYJNVN+VODUJPO5FNQFSBUVSF3BOHF Ę$ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 60 V Drain Current -Continuous (TC=25Ċ) 85 A ID Drain Current -Continuous (TC=100Ċ) 60 A IDM Drain Current -Pulsed 340 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 929 mJ EAR Repetitive Avalanche Energy 17.6 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns Power Dissipation (TC=25Ċ) 176 W PD - Derate above 25Ċ 1.17 W/Ċ TJ,TSTG Operating and Storage Temperature Range –55 to + 175 ĊTL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 Ċ• Drain current limited by maximum junction temperature
Preliminary Data Sheet Bruckewell Technology Corp., Ltd. VDS=42.5 V, ID=30A, RG=25Ω –– 150 -- ns Qg Total Gate Charge –– 70 -- nC Qgs Gate-Source Charge –– 20 –– nC Qgd Gate-Drain Charge VDS=48V,ID=85A, VGS=10V –– 30 –– nC
Preliminary Data Sheet Bruckewell Technology Corp., Ltd.