MS75N075 BWTECH | Alldatasheet

Document overview

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Technical content

Features

  • RDS(on) (Max 0.017 Ω )@VGS=10V
  • Gate Charge (Typical 85nC)
  • Improved dv/dt Capability, High Ruggedness
  • 100% Avalanche Tested
  • Maximum Junction Temperature Range (175°C)
  • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 75 V ID Drain Current -Continuous (TC=25°C) 75 A Drain Current -Continuous (TC=100°C) 52.5 A IDM Drain Current –Pulsed 300 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 1350 mJ EAR Repetitive Avalanche Energy 9 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns PD Power Dissipation (TC=25°C) - Derate above 25°C 190 W

1.27 W/°C

TJ/TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 °C

  • Drain current limited by maximum junction temperature

Publication Order Number: [ MS75N75] © Bruckewell Technology Corporation Rev. A -2014 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 1.43 °C/W RθJA Junction-to-Ambient -- 62.5 On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units VGS Gate Threshold Voltage VDS = VGS,ID = 250μA 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V,ID = 3.75 A -- 0.014 0.017 Ω Off Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0 V , ID = 250μA 75 -- -- V △BVDSS /△TJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.08 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 75 V , VGS = 0 V VDS = 60 V , VC = 125°C -- -- 10 100 μA IGSSF Gate-Body Leakage Current,Forward VGS = 20 V , VDS = 0 V -- -- 100 μA IGSSR Gate-Body Leakage Current,Reverse VGS = -20 V , VDS = 0 V -- -- -100 nA Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units CISS Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0MHz -- 3000 -- pF COSS Coss Output Capacitance -- 1100 -- pF CRSS Crss Reverse Transfer Capacitance -- 250 -- pF Switching Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units td(on) Turn-On Time VDS = 37.5 V, ID = 75 A, RG = 25 Ω -- 25 60 ns tr Turn-On Rise Time -- 300 700 ns td(off) Turn-Off Delay Time -- 150 310 ns tf Turn-Off Fall Time -- 180 370 ns Qg Total Gate Charge VDS = 60 V,ID = 10 A, VGS = 75 V -- 85 110 nC Qgs Gate-Source Charge -- 15 -- nC Qgd Gate-Drain Charge -- 40 -- nC

Publication Order Number: [ MS75N75] © Bruckewell Technology Corporation Rev. A -2014 Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units IS Continuous Source-Drain Diode Forward Current -- -- 75 A ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 300 VSD Source-Drain Diode Forward Voltage IS = 75 A , VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time IS = 75 A , VGS = 0 V diF/dt=100A/μs -- 90 -- ns Qrr Reverse Recovery Charge -- 250 -- μC Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature.

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