MS2203 NJSEMI | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- 1090 MHz
- 18 VOLTS
- POUT =0.6 WATTS
- GP= 10.8 dB MINIMUM
- CLASS A OPERATION
- INFINITE VSWR CAPABILITY @ RATED CONDITIONS
- COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. .280 2LFL M220 epoxy sealed PIN CONNECTION 1. Collector 3. Base 2. Emitter 4. Emitter ABSOLUTE MAXIMUM RATINGS (Tease = 25°C) Symbol VCE Ic PD Tj Tstg Parameter Collector-Emitter Collector Current Total Device Dissipation Junction Temperature Storage Temperature Range Value 300 200 -65 + 150 Unit V mA W Thermal Data RTH(J-C) ^^•WKM Thermal Resistance Junction-case °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders OnnlJh/
ELECTRICAL SPECIFICATIONS (Tease = 25 C) STATIC Symbol BVCEO BVCBo BVEBO ICES HFE Test Conditions lc= 5.0mA IB = OmA lc= 1.0mA IE = OmA IE = 1.0mA lc=OmA VCE=28V VCE = 5.0V lc= 100mA Value Min. 3.5 ... Typ. ... ... ... Max. ... ... 1.0 120 Unit V V V mA ... DYNAMIC Symbol POUT GPE Test Conditions f= 1025 -1150 MHz P,N = 50mW f= 1025 -1150 MHz P|N = 50mW Value Min. 0.6 10.8 Typ. 0.85 12.3 Max. ... Unit W dB Conditions: VCE = 18V Icq = 120 mA