MS1227 NJSEMI | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- 30 MHz
- 12.5 VOLTS
- GOLD METALIZATION
- POUT = 20 W MINIMUM
- GP = 15dB
- COMMON EMITTER CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic PDISS Tj TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 4.0 4.5 +200 -65 to +150 Unit V V V A W Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 °C/W Quality Semi-Conductors
ElECTRICAl SPECIFICATIONS (Tease = 25 C) STATIC Symbol BVcbo Bvces Bvceo Bvebo Ices HFE Test Conditions lc = 50mA IE = OmA lc = 50mA VBE = 0V lc = 50mA IB = OmA IE = 5mA lc = OmA VCB = 15V IE = OmA VCE = 5V lc = 1A Value Min. 4.0 ... Typ- ... ... ... ... ... ... Max. ... ... ... ... 200 Unit V V V V mA ... DYNAMIC Svmbol POUT GP IMD Cob Test Conditions f = 30MHz Vcc = 12.5V ICQ = 25mA f = 30MHz Vcc = 1 2.5V ICQ = 25mA f = 30MHz Vcc = 1 2.5V ICQ = 25mA f=1MHz VCB=30V Value Min. ... ... TVD. ... ... ... ... Max. ... ... -30 135 Unit w dB dB Pf ».125 NOM. A B C D E F G H r- h ^TT I .NCHES/MM .220/5.59 . 785/1 9.94 .720/18,29 i. 970/24.64 .004/0,10 .085/2,16 .16O/4.06 INCHES /MM .230/5.84 .730/18.54 .980/24.89 .385/9,78 .006/0.15 .105/2.67 .180/4,57 I J J , i I | G H f t MiNiMuM NCHES/MM .240/6,10 MAXIMUM .260/7.11 .255/6.48 t I i