MRF914 NJSEMI | Alldatasheet
Document overview
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Technical content
Features
- Silicon NPN, High Frequency Transistor
- High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz
- Low Noise Figure: NF = 2.5 dB (typ) @ f = 500 MHz
- High FT - 4.5 GHz (typ) @ 1C = 20 mAdc TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. ABSOLUTE MAXIMUM RATINGS ITcase = 25 C) Symbol VCFH VCBO VEBo Ic Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 3.0 Unit Vdc Vdc Vdc mA Thermal Data PD Total Device Dissipation @ TA = 25° C Derate ahnve ?S°C 200 1 R mWatts mW/ ° P. ELECTRICAL SPECIFICATIONS (Tease - 25 Cl NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. M Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
STATIC [Off] Symbol BVCEO BVcso BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (1C = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, 1C = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Value Min. 3.0 Typ. Max. Unit Vdc Vdc Vdc nA STATIC (on) HFE DC Current Gain (1C = 20 mAdc, VCE = 10 Vdc) 200 DYNAMIC Symbol fr CCB Test Conditions Current-Gain - Bandwidth Product (1C = 20 mAdc, VCE = 10 Vdc, f = .5 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Value Min. Typ. 4.5 0.7 Max. Unit GHz PF
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, 1C = 20 mA