MRF899 NJSEMI | Alldatasheet
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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800-960 MHz.
- Specified 26 Volt, 900 MHz Characteristics Output Power = 150 Watts (PEP) Minimum Gain = 8.0 dB @ 900 MHz, Class AB Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP) Maximum Intermodulation Distortion -28 dBc @ 150 Watts (PEP)
- Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz
- Silicon Nitride Passivated
- 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS MRF899
1 SOW,900 MHz
CASE 375A-01, STYLE 1 Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO PD Tslg Value 4.0 230 1.33 -65 to + 150 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case Symbol RBJC Max 0.75 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Oc - 100 mAdc, IB - 0) Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, Ic = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR|CES V(BR)EBO ICES 4.0 4.9 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) 120 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) Cob (1) For information only. This part is collector matched. (continued) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Figure 1. 900 MHz Power Gain Test Circuit