MRF897 NJSEMI | Alldatasheet
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Technical content
'Istieu ZPioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800-970 MHz.
- Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10 dB @ 900 MHz, class-AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion -30 dBc @ 30 Watts (PEP)
- Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz
- Silicon Nitride Passivated
- 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power
- Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal- Migration
- Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS MRF897 SOW, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE395B-01, THERMAL CHARACTERISTICS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO ic PD Tstg Value 4.0 4.0 105 0.60 -65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C Characteristic Thermal Resistance, Junction to Case Symbol RSJC Max 1.67 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, VBE = °) Emitter-Base Breakdown Voltage (IE = 5 mAdc, Ic = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)EBO !CES 4.0 4.7 10.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1 -0 Adc, VCE = 5 Vdc) hFE 120 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) Cob PF Onolllv (continued)
Figure 1. MRF897 Broadband Test Circuit