MRF894 NJSEMI | Alldatasheet
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, U nc, MRF894 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA NPN SILICON RF POWER TRANSISTOR TELEPHONE: (973) 376-2922 (212) 227-6005 DESCRIPTION: ! MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application. FEATURES:
- Internal Input Matching Network
- PG = 7.5 dB at 30 W/960 MHz
- Omnigold™ Metalization System
- TIC = 55 % Typ.
- = Load mismatch capability 20:1 MAXIMUM RATINGS Ic VCBO VCEO VEBO PDISS Tj TSTG 9jc 7.5 A 48V 25V 3.5V
88 W @ Tc = 25
-65 °C to +200 ° -65 °C to +150° C C 2.0 °C/W PACKAGE STYLE .230 6L FLG i i .430! D I ! DIM A B C D E F G H J K L - A - r -B- 040x45" . 4X .025 R V ... . .115 i ! , . : . 125 - -~ F G H I I , MINIMUM nches / mm .355/9.02 115/2 92 075 /1.91 .225 /5,72 .090 12 29 .720/ 18.29 .355/9.02 .004/0.10 .160/4.06 .230/5.84 2X0 J K 1 ! MAXIMUM inches / mm .365/9.27 .125/3.18 .085 12 16 ,235/5.97 ,110/2.79 730 / 18.54 ,980/24.89 365/9 27 .006/0.15 130/3.30 180/4,57 .260 /6.60 130 L f CHARACTERISTICS Tc = 25°c SYMBOL BVceo BVcER BVCEO BVEBO ICBO HFE COB PG IMD3 T!C TEST CONDITIONS lc = 100 Ma lc = 40mA RBE = 150Q lc = 40 mA IE= 10mA VCE = 24 V VCE = 20V IC = 2.0A VCB = 25 V f = 1 .0 MHz VCE = 25 V ICQ = 60 mA f = 860 MHz POUT = 30 W f, = 860.0 MHz f 2 = 860.1 MHz MINIMUM 3.5 7.5 TYPICAL 5.0 9.0 -35 MAXIMUM 100 ... UNITS V V V mA ... PF dB dBc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of mint to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use \\ Semt-( onductors encourages customers to verity that datasheets are current before placing orders