MRF839 NJSEMI | Alldatasheet
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na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF839 MRF839F TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
3 W 806-960 MHz
Collector-Current — Continuous j Operating Junction Temperature Total Device Dissipation KI TC HOC j Derate above 110 C j Storage Temperature Range Symbol VCEO VCBO VEBO ic Tj PD Tstg Value 3.5 0.6 200 111 65to • 150 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case Symbol R»JC Max Unit °C/W MRF839 MRF839F ELECTRICAL CHARACTERISTICS (Tc - 25 C unless otherwise noted.! Characteristic Symbol Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ig 5 mAdc, Ig 01 Collector-Emitter Breakdown Voltage dc 5 mAdc, Vgg - 01 Emitter-Base Breakdown Voltage (If 0.1 mAdc. Ic ~ 01 Collector Cutoff Current (VcE ' 15 Vdc, VBE 0. TC 25°C) VIBRICEO V(BRICES V(BR)EBO ICES 3.5 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (Ic - 100 mAdc. VCE = 5 Vdcl "FE 150 DYNAMIC CHARACTERISTICS Output Capacitance I VCB - 15 Vdc, IE --- 0. f 1 MHz) Cob 6.5 FUNCTIONAL TESTS (FIGURE 1) Common-Emitter Amplifier Power Gain IPOU, - 3 W. VCC - 12-5 Vdc. f - 870 MHzl Collector Efficiency IPout - 3 W. Vcc - 12.5 Vdc. f = 870 MHzl Load Mismatch Stress IVCc - 15.5 Vdc. Pin - 0.5 W, f = 870 MHz. VSWR = 20:1. all phase anglesl GPE dB No Degradation in Output Power Quality Semi-Conductors