MRF653 NJSEMI | Alldatasheet
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tSzm.l-Canciu.ctoi , U nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 The RF Line NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65% (Typ)
- Gold Metallized, Emitter Ballasted for Long Life and Reliability
- Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25"C Derate above 25'C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCBO VEBO Ic PD Tstg Tj Value 16.5 4.0 2.75 0.25 -65to+150 200 Unit Vdc Vdc Vdc Adc Watts WA'C THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Tc = 25CC unless otherwise noted) MRF653 10 W. 512MHz RF POWER TRANSISTOR NPN SILICON Characteristic Thermal Resistance, Junction to Case Symbol RUJC Max 4.0 Unit C/W Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (Ig = 5.0 mAdc, Ic = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)EBO 'CES 16.5 4.0 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (lc = 1 .0 Adc, VCE = 5.0 Vdc) HFE 120 DYNAMIC CHARACTERISTICS Output Capacitance (VCe = 12.5 Vdc, IE = 0, f = 1.0 MHz) Cob PF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pou, = 10 W, f = 512 MHz) Collector Efficiency (Vcc = 12.5 Vdc, Pout = 10 W, f = 512 MHz) Load Mismatch Stress (VCc = 16 Vdc, f = 512 MHz, Pln (1 ) = 2.6 W, VSWR = 20:1 , All Phase Angles) Gpe He V 7.0 8.0 dB No Degradation in Output Power NOTE: 1. Pjn = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc. Quality Semi-Conductors