MRF652 NJSEMI | Alldatasheet
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<zSs.mi-(2onductoi <U~) to ducts., LJYLC. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN Silicon RF Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF652 MRF652S MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ Tc = 2S°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCBO VEBO ic PD Tgtg Tj Value 4.0 2.0 143 -65to+150 200 Unit Vdo Vdc Vdc Adc Watts mW/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case Symbol Reoc Max 7.0 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) MRF6S2 MRF652S Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ' • (Ic = 25 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (Ic = 25 mAdc, VBE = 0) Collector-Base Breakdown Voltage (lc = 25 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, lc = 0) Collector Cutoff Current (VCE = 15Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 4.0 1.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (lc = 200 mAdc, VCE = 5.0 Vdc) Characteristic HFE Symbol 10 — Min | Typ 150 Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 1 5 Vdc, IE = 0, f = 1 .0 MHz) Cob — | 9.5 | 15 PF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain f = 51 2 MHz (Vcc = 12.5 Vdc, Pout = 5.0 W) f = 870 MHz Collector Efficiency "> (Vcc = 1 2.5 Vdc, Pout = 5.0 W, f = 51 2 MHz) Load Mismatch (Vcc = 15-5 Vdc, Pjn = 500 mW, f = 512 MHz, VSWR = 30:1 , At All Phase Angles) Gpe n V 6.0 dB No Degradation in Output Power