MRF607 NJSEMI | Alldatasheet
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L-ConcLuctoi Lpi.oa.ucti., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN SILICON RF POWER TRANSISTOR ... designed for amplifier, frequency multiplier, or oscillator ap- plications in military, mobile, marine and citizens band equipment. Suitable for use as output driver or pre-driver stages in VHP and UHF equipment.
- Specified 12.5 Volt, 175 MHz Characteristics - Output Power = 1.75 Watts Minimum Gain - 11 5 dB Efficiency = 50%
- Characterized through 225 MHz MAXIMUM RATINGS Rating
1 Colleclor-6 muter Voltage
! Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation <5> TQ - 75°C (1} Derate above 75°C Slorage Temperature Range Symbol VCEO VCBO VEBO 0.33 3.5 Watts mW/°C TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 MRF607
1.75 W-175 MHz
L E SEATING PLANE Q M s — x — B T-P i t D G ^ t STYLE 1 PIN 1 EMITTER 2. BASE 3. COLLECTOR MILLIMETERS! INCHES aim A c D E f Q H J K L M p Q n MIN 889 800 6.10 0406 0229 0406 483 0711 0737 1270 635 45° H MAX 940 851 6 60 0533 3 18 0483 533 0864 1 02 OM 1.27 90° NOM 254 MIN 0350 0315 0240 0016 0.009 JUUiii 0 190 0028 0.029 0500 0250 MAX 0370 0335 0260 0021 0125 0019 0210 0031 0040 45° NOM 0050 90" » 0.100 CASE 79 02 T039 All JEOEC notK and dinwnsions apply. Quality Semi-Conductors
, (J nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 MRF607 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (lc = 25 mAdc, IB -0) Collector -Emitter Breakdown Voltage (lc-25 mAdc. VBE -0) Emitter-Base Breakdown Voltage (IE =0.5 mAdc, lc = 0) Collector Cutoff Current (VCE = 10 Vdc, IB -Ol VIBR]CEO VIBRICES VIBRIEBO 'CEO 0.3 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain »C = 50 mAdc, VCE = 5.0 Vdcl HFE 150 DYNAMIC CHARACTERISTICS Output Capacitance < VCB ~ !2 Vdc. IE = 0, f = 1.0 MHz) Cob IS pF FUNCTIONAL TEST (Figure 11 Co m mon -E mi tter Amplifier Power Gain <pcut = 1-75 W, Vcc = 12.5 Vdc, f - 175 MHz) Collector Efficiency <Pout = 1.75 W. VCG= 12.5 Vdc, f = 175MHz) GPE 11.5 dB FIGURE 1 - 175 MHz TEST CIRCUIT SCHEMATIC J_ + 12.5 Vdc Tcej—C- , <-N MX J "' LI x ' " i <r— tc3 J • C1 2.7-15 pF, ARCO 461 C2 9.0 180 pF, ARCO 463 C3.C4 5.0-80 pF. ARCO 462 C5 1000pF UNELCO C6 5 (IF, 25 Vdc. TANTALUM LI 1 Turn ff20 AWG. 3/8" ID L2 3 Turns «0 AWG.3/8" ID L3 0.22 uH Molded Choke L4 0.15 WH Molded Choka with FERROXCUBE 56590 65 3B Bead on ground lead Quality Semi-Conductors