MRF581 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

-^emi-Conducto'i {Ptoducti., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

features

. Low Noise - 2.5 dB @ 500 MHZ

  • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
  • Ftau-5.0 GHz @ 10v, 75mA
  • Cost Effective MacroX Package DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tease = 25°C, Symbol VCEO VCBO VEBO Ic Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 MRF581A 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data p D P D Tstg ' Jmax Total Device Dissipation @ TC = 50°C Derate above 50°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Junction Temperature Range Maximum Junction Temperature 2.5 1.25 -65 to +150 150 Watts mW/°C Watts mW/°C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. M Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.

ELECTRICAL SPECIFICATIONS (Tease = 25°C) STATIC (otn Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage MRF581 (1C = 5.0 mAdc, IB = 0) MRF581A Collector-Base Breakdown Voltage (1C = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15Vdc, VBE = OVdc) Collector Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) Value Min. 2.5 Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc mA mA [on) HFE DC Current Gain MRF581 (1C = 50 mAdc, VCE = 5.0 Vdc) MRF581A 200 250 DYNAMIC Symbol COB Ftau Test Conditions Output Capacitance (VCB = 10Vdc, IE = 0, f= 1.0MHz) Current-Gain Bandwidth Product (1C = 75 mAdc, VCE = 10 Vdc, f= 1.0 GHz) Value Min. Typ. 2.0 5.0 Max. 3.0 Unit PF GHz

Table 1. Common Emitter S-Parameters, @ VCE = 10 V, 1C = 50 mA