MRF571 NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 NPN SILICON HIGH FREQUENCY TRANSISTORS ... designed for low-noise, wide dynamic range front end am- plifiers, low-noise VCO's, and microwave power multipliers.

  • Low Noise
  • High Gain
  • Available in Low Cost Plastic, High Reliability Ceramic or Die
  • State-of-the-Art Technology Fine Line Geometry Ion Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation
  • Fully Characterized MRF571 MRF572 MRFC572 fr = 8.0 GHz @ BO mA NF = 1.0 dB@ 500 MHz NF = 1.5 dB (3 1.0 GHz NF = 2.5 dB @ 2.0 GHz HIGH FREQUENCY TRANSISTORS NPN SILICON OFF CHARACTERISTICS ON CHARACTERISTICS FUNCTIONAL TESTS Quality Semi-Conductors NOTE 1. t MAXIMUM RATINGS Rlting* Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 50*C<D Derate above Tc = 50°C Storage Temperature
  • H tamper* Symbol VCEO VCBO VEBO ic PD Tstg MRFCS72 Chip MRF571 i>&^ Macro-X Cm* 31741 Style 2 MRF572 Cue 303-01 Style 1 Value* 3.0 0.75 Tj = 200°C max -65 to +200 3.0 1.0 - 65 to + 150 3.0 0.76 5.0 -65 to + 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C tiure meatured on collector lead immediately adjacent to body of package. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Mln Typ Max Unit Collector-Emitter Breakdown Voltage (Ic = 1.0 mAdc, IE - 0) Collector-Base Breakdown Voltage dc = 0.1 mAdc, IB = 0) Emitter-Base Breakdown Voltage (Ig = 50 /*Adc, Ic = 0) Collector Cutoff Current (VCB - 8.0 Vdc, IE = 0) VIBRICEO VIBRICBO VIBRIEBO ICBO 2.5 Vdc Vdc Vdc ,iAdc DC Current Gain (Ic - 30 mAdc, VCE - 5-° vdcl DYNAMIC CHARACTERISTICS Collector-Base Capacitance (VCB = 6.0 Vdc, IE = 0, f - 1.0 MHz) Current Gain — Bandwidth Product (VCE = 8.0 Vdc, Ic = 50 mA, f - 1.0 GHz) hFE | 50 300 Ccb fr 0.7 8.0 1.0 pF GHz Gain (w Noise Figure dC = 5.0 mAdc, VCE = 6.0 Vdc) = 0.5 GHz = 1.0 GHz Noise Figure dC = 5.0 mAdc, VCE = 8-0 Vdc) - 0.5 GHz = 1.0 GHz MRF571 - 2.0 GHz MRF572 f - 2.0 GHz GNF NF 16.5 1.0 1.5 2.8 2.5 2.0 dB dB