MRF555 NJSEMI | Alldatasheet
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Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tease = 25° C) Symbol VCEO VCBO VEBO Ic Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 3.0 500 Unit Vdc Vdc Vdc mA Thermal Data p D Total Device Dissipation @ TC = 75°C Derate above 75°C 3.0 Watts mW/°C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished bv N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \\ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
ELECTRICAL SPECIFICATIONS (Tease = 25°C) STATIC Symbol BVcEO BVCES BVEBO ICES HFE Test Conditions Collector-Emitter Breakdown Voltage (lc = 5 mAdc, IB = 0) Collector-Emitter Sustaining Voltage (lc = 5.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, lc = 0) Collector Cutoff Current (VCE = 15Vdc, VBE = OVdc) DC Current Gain (lc = 100 mA, VCE = 5.0 Vdc) Both Value Win. 3.0 Typ. Max. 200 Unit Vdc Vdc Vdc mA DYNAMIC Symbol COB Test Conditions Output Capacitance (VCB = 1 0 Vdc, IE = 0, f = 1 .0 MHz) Value Min. Typ. ... Max. 5.5 Unit PF FUNCTIINU Symbol GPE n V Test Conditions Power Gain Collector Efficiency Load Mismatch VSWR > 10:1 All Phase Angles Test Circuit-Figure 1 Pout =1.5W, VCE=12.5Vdc f = 470 MHz Test Circuit-Figure 1 Pout =1.5W, VCE=12.5Vdc f= 175 MHz Test Circuit-Figure 1 Pout =1.5W, VCE=12.5Vdc f= 175 MHz Value Min. Typ. 12.5 Max. No Degradation in Output Power Unit dB