MRF525 NJSEMI | Alldatasheet
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Technical content
, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF525 100-500 MHz BROADBAND HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . designed specifically for broadband linear amplifier stages in the 100-500 MHz frequency range.
- Guaranteed Performance at 225-400 MHz, 26 Vdc Minimum Gain ^ 13 dB Maximum NF -• 4.0 dB
- Third Order Intercept < 35 dBm (Typ)
- Common Emitter TO-39 Type Package
- S-Parameter Characterization MAXIMUM RATINGS Ruing Collector-Emitter Vpltege tHBE • 33011) CoMtctor-Bne Voltige Emitter Bau Voltage Collector Currant - Continuous Total Pwwr Difiipittan 9 TA - 50°C D*r«tt tbov* 50°C Optrating Junction T«mp«raTure Storage Tamperaturp Range Symbol VCER VCBO VEBO PD TJ T,,S Valu* K ISO 0.017 + 175 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts W/°C THERMAL CHARACTERISTICS CrwrictariRic Thermal Refinance, Junction to Cata Symbol RflJC Mm Unit °c/w Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS ITC . 26°C unl«» otherwue noted.1 ChltK»rntic Symbol I Typ IVU. I Un.t OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage llQ = 50mAdc, IB - 01 Collector-Emitter Breakdown Voltage llc = 5.0 mAdc. RBE • 330 Ohmj) Collector Base Breakdown Voltage (IC-0.1 mA.lE -0) Emitter-Base Breakdown Voltage |IE -0.1 mA. Ic-OI Collector Cutoff Current 1 !VCE J 16 Vdc, IB = 01 VIBWCEO VIBRICER VIBRICBO V<BRIEBO 'CEO 100 Vdc Vdc Vdc vac ON CHARACTERISTICS DC Current Gain HC - 80 mAdc. VCE " 10 Vdc) "FE 175 DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (1C • 50 mAde, VCE • 20 Vdc, f • 200 MHz) Output Cepaci lance (VCB- 10 Vdc, iE • o, t - 1.0 MHZ) Cob 2.2 2.S 4.0 GHr PF FUNCTIONAL TEST - BROADBAND IFiourt 1) Common Emitter Amplifier Povwr Gain (VCC - 26 Vdc. Pin - 0 dBm, 1 • 400 MHz) Broadband Noiw Figure (VCE - 26 Vdc. f - 400 MHz) GPE NF 4.0 dB dB STYLES PIN 1. COLLECTOR PIN 2 BASE PIN 3. EMITTER DIM A B C F G H J . K M N q MILLIMETERS MIN 9.02 8.00 4.19 0.43 0.43 0.41 4.83 0.71 0.74 njo MAX 9.30 8.51 4.57 0.53 0.89 0.48 5.33 0.86 1.02 45* NOW
2.54 TYP
90* NOM INCHES MIN 0.355 0.315 0.165 0.017 0.017 0.016 0.190 0.028 0.029 0.500 MAX 0.366 0.335 0.180 0.021 0.035 0.019 0.210 0.034 0.040 45» NOM
0.100 TYP •
90° NOM NOTE: Thi pin configuration of thit version of the TO 39 package difftri from the common iulated emitter typt. All JEDEC dimcniiom ind notei apply. TO-39