MRF5015 NJSEMI | Alldatasheet

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Technical content

-zStmi-donduckoi ZPioaueti, {Jnc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.

  • Guaranteed Performance at 512 MHz, 12.5 Volts Output Power — 15 Watts Power Gain — 10 dB Min Efficiency — 50% Min
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • S-Parameter Characterization at High Bias Levels
  • Excellent Thermal Stability « All Gold Metal for Ultra Reliability
  • Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF5015 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET MAXIMUM RATINGS CASE 319-07, STYLE 3 Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M£J) Gate-Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg Tj Value ±20 0.29 -65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol R9JC Max 3.5 Unit °C/W

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (V<3S = 0, IQ = 5 mAdc) Zero Gate Voltage Drain Current (Vos = 15 Vdc, VQS = 0) Gate-Source Leakage Current (VQQ = 20 Vdc, VQS = 0) V(BR)DSS toss IGSS Vdc mAdc nAdc (continued) Oilrtlifv

22 Transmission Line*

29 Transmission Line*

210 Transmission Line*

Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic