MRF501 NJSEMI | Alldatasheet
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, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF501 (SILICON) MRF502 The RF Line NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed primarily for use in high-gain, low-noise amplifier, oscillator, and mixer applications. Can also be used in UHF converter applications.
- High Current-Gain • Bandwidth Product — ft - 1 .2 GH/ (Typ) ® Ic - 5.0 mAdc
- Low Noise Figure - NF = 4.0 dB (Typ) @ f - 200 MHi MAXIMUM RATINGS RMinf Symbol MRFSO1 | MRF5O2 Unit CollKUX-Emitnr Voltage VCEO 1S V* Colleetor-Bw Voltagl VCBO 25 [ 36 Vdc Emitter-five Voltage V£BQ 3.5 • Vdc Collector Current Ic 50 mAdc Totil Device Oinlpttion 0 TA - 2S°C Po 200 m« Derate Ibovi 2S°C 114 mW/°C Storage T«npKMur> Range Tng -65 to +2OO °C NPN SILICON RF SMALL-SIGNAL TRANSISTORS f L |— — -j— 8 1 1 (' SEATING PLANE STYLE 10 PIN1 EMinER 2. BASE — »
3 COLLECTOfl
- CASE f A c D E F G H J K L H f MILLII 5.31 4.S? 4.32 0.41 0.41 ETERS 5^4 4.95 5.33 0.53 0.7? 0.48 2.5. BSD 0.91 0.7! 12.70 6.35
- *r 1.17 1.22 l$l
147 BSC
E ITNN !«a 0.209 0 0.171 1 0.170 1 00t6 1 D.016 J 01008 0.036 C 0.028 1 0500 _y&o _ tS'p. OMOt - 1 1 C J. K i G T s MX | 1 .230 -1SS 110 .021 .030 .019 Jus .041 C .050 ALL JEDEC diiMflHom md nom vply NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
MRF501, MRF502 (continued) ELECTRICAL CHARACTERISTICS (TA - 25°c uniw ottwrvrae nond) I Symbol I TV, I I Urt. I OFF CHARACTERISTICS Coltoctor-EmrtUr Breakdown Voltaga (lc - 3.0 mAdc. IB - 0) Coll«ctOf-B«w Breakdown Vcritao* MR F5O1 (lc- 1.0 MAdc, IE-0) MRF502 Emitw-Ben Breakdown Voltaga <l£-1.0pAdc,lc-0) Colltttor Cutoff Currant MRFS01 (Vca- 1.0 Vdc. IE-0) MRF602 BVceo BVCBO evEBO 'CBO IS 3.6 so Vdc Vdc Vdc nAdc ON CHARACTERISTICS DC Currant Gain MRFS01 llr; -1.0 mAdc, Vce- 6.0 Vdc) MRF502 "FE 25O 170 DYNAMIC CHARACTERISTICS Currant Gain - Bandwdlth Product MRFS01 |IC - 6.0 mAdc, VCE - 6-0 Vdc, f - 100 MHz) MRF502 Collector-Baai Capacitance (VCB - 10 vdc, iE - o, f • o.i to 1.0 MHZ) Colteetor.Baee Time Conitant HE - 2.0 mAdc, VCB - 6-0 Vdc, f - 31 .8 MHz) Noia. Figure (Figure!) MRF501 llc • 1.5 mAdc, VCE -6.0 Vdc, MRF602 RS - SOohmi, f - 200 MHz) ff ^cto rb'Cc NF 600 800 1000 1200 0.6 8.0 4.5 4.0 MHz pc pi dB FUNCTIONAL TEST Common-EmitW Amplifier Pow«r Gain (Figure 1) MRFS01 (Vcc - 6-0 Vdc, lc - 6.0 mAdc, f - 200 MHz) MRFB02 Gp. dB FIGURE 1 - MOMHl AMPLIFIER POWER GAIN AND NOISE FIGURE CIRCUIT 1N319S LI 13/4Turn, til AWG, 0.5" Long, 0.5" DiirMir L2 2Tufm,#16AWG,0.5" Long.IU"D*in«ir L3 2 Turin, fit AWG, 0 25" Long, 0.5" Oiimrtr, Portion ApproikniUly OJS" from L2