MRF497 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF497 The RF Line NPN SILICON RF POWER TRANSISTOR ,,, designed for 12.5 volt VHP large-signal power amplifier appli- cations in commercial and industrial equipment, operating in the 25 to 50 MHz frequency range.
- Low-Cost, Common-Emitter TQ-22GAB Package
- Specified 12.5 V, 50 MHz Performance — Output Power = 40 Watts Power Gam = 10 dB Min Efficiency = 60% Min
- Load Mismatch Capability at Rated Voltage and RF Drive MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector -Base Voltage Eminer-Base Voltage Collector-Current — Continuous Total Device Dissipation Derate above 25°C " 25°C |1) Storage Temperature Range Symbol PD 4 o 87 S 65 to *t 50 Unit Wans mW/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case {2) Symbol RBJC 2 o [DThis device is designed for RF operation The total device dissipation rating appli« only whan the device is operated as an RF amplifier 12) Thermal Resistance if delermned under specified RF operating conditions by nfr rtieasufem«nt techniques FIGURE 1 — 50 MHz TEST CIRCUIT C1 —Area 469 C2 C3 — AfCO 466 CS— 100 M* 'SVdc Eltctro'ytic C6 - ft 001 *iF OK Carafe m — iflfl i 0 Wan f»«p«or L1 — 3 Tumi #U AWG Wir* I V ID 12 — 1 12 Turn* #14 AWO Wir» 1 2 L3 — U Turns f 1fi AWG Wire 1 4' 10 CZ^ LI RFC2 - 3 Ftrromib* •M-9t04$ 38 BW4* on i»H AWG S — Firroxcub* »M-*K 65/36 Board MIMN* — Epov F»b»»fllm 0 0*J' ihtck
40 W BO MHz
O —M -- STYLi I PlWI BAK J EWTTlfl i coufCTW lEMTTER 1 &i viifM -SC
1 CtWTIIOLLING WMCNSCN IhtCH
3 OH I DEFINES 4 fflNt WWH AIL
Lf AC flWCdUUllTf S ME tUOV* inujiyTni_ **HO «* | m : MM ; mt «T1 n«j : UTS ! oTw o^l ml JB | aw I «»_ JM; 101 | Din am IM -- ' ,.^ '»t, WJ.1I&. Hi pa f iiii T,m i "i I - I '-mt^.T-| i -I ml- i«• I CASE 221A-04 TO-220AB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to Be both accurate and reliable at the time of going to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors