MRF486 NJSEMI | Alldatasheet
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<$Emi-(2onclu<2toi ^Products., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN SILICON RF POWER TRANSISTOR . . designed primarily for application as a high-power linear amplifier from 1.5 to 30 MHz. in single sideband mobile, marine and base station equipment.
- Low-Cost, Common-Emitter TO-220AB Package
- Specified 28 Volt, 30 MHz Performance — Output Power - 40 W (PEP) Power Gain = 15 dB Mm Efficiency *• 40% Min
- Intermodulation Distortion (a 40 W (PEP) — IMD = -30dB (Max)
- 30:1 VSWR Load Mismatch Capability at Rated Output Power and Supply Voltage MAXIMUM RATINGS Rating Symbol Value Unit Col ector Emitter Voltage VCEO & Vclc Col ;ector-8ase Voltage VC8O 6S Vdc Emitter Base Voltage VF.BO 40 Vdc Collector Current - Continuous l£ JO Adc Withstand Current - 60 Adc !t " SOsI Total Device Dissipation <g) Tc"25°C(l) PD 875 Waits Derate above 25°C ' 05 «f/°C Storage Temperature Range Tstg -65 to* 150 °C THERMAL CHARACTERISTICS Chiractenstics Symbol Maut Unit Thermal Resistance Junction to Case R0JC 20 °C/W
111 This device is designed for RF operation The total device dissipation rating applies
only when the devic« is operated as an RF amplifier FIGURE 1 — 30 MHz TEST CIRCUIT
28 Vde
13 SSB 1 1
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40 W (PEP)-30MHi
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J^U^i!? 1 -IHJ ¥ 1 - tl i : - :« - »« CAM 221A-04 TO-230AB -r-H — — J rmi* mac* ITTW WO NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, [nrormation furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. VI .Semi-Conductors entourages customers to verity that datasheets are current before plating orders.