MRF466 NJSEMI | Alldatasheet
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Technical content
i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF466 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. FEATURES:
- PG= 15dBmin. at 40 W/30 MHz
- IMD3 = -30 dBc max. at 40 W (PEP)
- Omnigold™ Metalization System MAXIMUM RATINGS Ic VCBO VCEO PDISS Tj TSTG eJC 6.0 A 65V 35V 175W@TC = 25°C -65 °C to +200 °C -65°Cto+150°C 1.0°C/W PACKAGE STYLE .380 4L FLG DIM A B C D E F G H J . 112x45' N \\ X 0,125 NOM. E — Q FULLR B - E ' ' c D F '" t MINIMUM MAXIMUM .220/559 230/5.84 .970 / 24 64 ,980 / 24.89 .385/978 .004/0.10 006/0.15 .085/216 105/2.67 .280/7.11 .240/610 .255/648 CHARACTERISTICS Tc = 25°c SYMBOL BVCEO BVCES BVEBO ICES hFE C0b GPE IMD3 TEST CONDITIONS lc = 100mA lc = 100mA IE = 1.0mA VE = 28 V VCE = 5.0V IC = 0.5A VCB = 28V f= 1.0 MHz VCE = 28 V ICQ = 20 mA f = 30 MHz POUT = 40 W (PEP) MINIMUM 4.0 TYPICAL 125 -40 MAXIMUM 200 -30 UNITS V V V mA ... PF dB dBc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, /nformation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI Semi-Conductors encourages customers ro verity that datasheets are current before placing orders