MRF455 NJSEMI | Alldatasheet
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, Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, com- mercial and amateur radio equ ipment to 30 MHz.
- Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 50 Watts Minimum Gain = 1 1 dB Efficiency = 50% MAXIMUM RATINGS RaiMf^ Syitfeal Value Unit Colllctor-E miner Voltege V<XO M Vdc Collectors Emitter-Ba axe Voltage x voltage VCBO 40 Vdc VEBO *-0 ~ Vdc Collector Current — Continuous l£ 7.5 Adc Total Device Oi»ipeJion $ TC - 2S°C PD 115 Warn Derate above 2S°C 066 W/°C Storage Temperature flange TIlg -65tQ 4-150 °C THERMAL CHARACTERISTICS Cheiacierinic Svmbol Max Unit Thermal Resilience. Junction to Ce» RflJC ' ^ °C/W RF > -f IftSllt i FIGURE 1 30 MHz TEST CIRCUIT SCHEMATIC 1 a i a — u-1! CI, C3. C4 C5, CS — E ce— 1000 Ri-toon LI —0 15 p L2 — FERW L3 — 3 Tuf L5-FERR InpuVOutpu Bo*rd-GI Ll J t cs i ^ cs C7 i; A c« 13.1 v« "tT! « ' j"J C4 # L' lit ^t '" ^ cz IK I 10 pF. ARCO 424 - 170- 780 pF. ARCO 4«9 RIE 0.1 iLf A 100 V RED CAPS pf UNELCO. 350 V«
35 Vdc
. 2.0 vv Carbon N Molded Choke MILLER 3XCUBE. VK200 20 4B u. #20 Enamel Wire. Close Wound on R1 3XCUBE #56-570-IS/3B. 9 Ferrile Beads, on r Long #20 wire t Connectors — Type N a» Teflon Mounted on t V « 4" « 2" 5EEZAK Bo. MRF450 MRF450A SOW -30 MHz RF POWER TRANSISTORS NPN SILICON ^rpsR\\ \\ \\s/\\s >v^L <&& ^== ^MSHff sm*r i i*s _xi !™ ±di;^ ' j Oil 1-1 ; j w ^ CAS t 21 1-07 L-* , Ml .Ul MRMoO PI ftft _»( ! r'u.~1Qr"4 j -U xJL_j t /•• ', \\ «om X-N^,^^,^-^ oeaisortcwcTO W ff % . ~ snui -|- "i:.« m'Oina "i"4j^? ifu^in ' ™ i " *o«un»i ; jj ,, a «•»• MRF460A Hi?*T« .) . '« ' i tHriiON wot
- •_ Hii <r» tJJ _ njit i m» «tH IM -JM..J*- „ JW_ _1BI_ _ J«_ J»t ir» i tne V Ij i u UUKJWrVaMl T"tS r-5 -43- .3 ± E urn I m _J ^SL NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \\ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.
MRF450, MRF450A ELECTRICAL CHARACTERISTICS |TC = 2S°C unte.soinerum nond.1 Ch*ract«ri*tie Symbol I •"" OFF CHARACTERISTICS Collector Emitter Breakdown Voltage flc = 100mAdc. IB = 0) Collector-Emitter Breakdown Voltage "C • 20mAdc. VBE =01 Col lector- Bale Breakdown Voltage ilC • 20mAdc. If - 01 Emitter Base Breakdown Volta»e IIE - lOmAdc, lc - 01 ON CHARACTERISTICS DC Current Gain (1C - VOAdc. VCE • 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Caoacitance IVCB- 15 Vd£. IE -O.I- 1.0 MHi) VCBRICEO V(BPICES VIBRICBO V(BRIEBO HFE Cob 4.0 Vdc Vdc Vdc vac 200 r pf FUNCTIONAL TESTS (Figura 1) Commcn-Emitier Amplifier Powvar Gain IVCC= 13.6 Vdc, POUI- SOW. lclm»xl -6.13Adc.f-30MH:) Collector Efficiency 'V^c =136 Vdt. Pout - SOW, lf;(frtax) = 6.13 Adc. f = 30 MHz) Sent! Equivalent Input Intpedance IVCC- 13.6 Vdc. Poul. 50W:f-30MHz) SsriBS Equivalent Output Impedance IVCC- 13.6 Vdc. P0ul- SOW, f = 30MHz) GPE 2out 1 56j8ft 174-) 50 dS Ohmt Ohm, FIGURE Z-INPUT POWER varwi OUTPUT POWER FIGURE 3 - OUTTUT POWER "araji SUPPLY VOLTAGE '5 20 25 3,0 3.5 40 45 50 f,n, INPUT POWER IVVATTSl ? m . — • <** fir, f ^^^ = 3.5 W - 30 MM I 8.0 SO 10 11 12 13 14 VCC. SUPPLY VOLTAGt IVOLTS]