MRF448 NJSEMI | Alldatasheet
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Technical content
^Products., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45%
- Intermodulation Distortion @ 250 W (PEP) — IMD = -30dB(Max)
- 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR MRF448
250 W, 30 MHz
Collector Current — Continuous Withstand Current — 10s Total Device Dissipation @ TC = 25°C (1 ) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 100 4.0 290 1.67 -65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol ROJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Symbol Win Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 200 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, VBE - 0) Collector-Base Breakdown Voltage (Ic = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, Ic = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 100 100 4.0 Vdc Vdc Vdc Vdc NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions. (continued)
- To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
50 Vdc
L3 — 12 Turns, #16 Enameled Wire Closewound 0.25" I.D. Figure 1. 30 MHz Test Circuit Schematic