MRF393 NJSEMI | Alldatasheet
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ioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon Push-Pull RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
- Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55% (Typ)
- Built-in Input Impedance Matching Networks for Broadband Operation
- Push-Pull Configuration Reduces Even Numbered Harmonics
- Gold Metallization System for High Reliability
- 100% Tested for Load Mismatch MRF393 The MRF393 \\s two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push-pull configuration. PUSH-PULL TRANSISTORS
100 W, 30 to 500 MHz
CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON CASE744A-01 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO ic PD Tstg Tj Value 4.0 270 1.54 -6510+150 200 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RSJC Max 0.65 Unit °CM/ NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push-pull amplifier. ^_^ Quality Semi-Conductors
- Each transistor chip measured separately.
- Both transistor chips operating in push-pull amplifier.
1 oz. Copper Clad both sides. Figure 1. 500 MHz Test Fixture