MRF329 NJSEMI | Alldatasheet
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na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range.
- Specified 28 Volt, 400 MHz Characteristics — Output Power = 100 Watts Minimum Gain = 7.0 dB Efficiency = 50% (Min)
- Built-in Matching Network for Broadband Operation Using Double Match Technique
- 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
- Gold Metallization System for High Reliability MRF329
100 W, 100 to 500 MHz
CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS CASE 333-04, STYLE 1 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO ic PD Tstg Value 4.0 9.0 270 1.54 -65to+150 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol Rejc Max 0.65 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (lc = 80 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (lc = 80 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, lc = 0) V(BR)CEO V(BR)CES V(BR)EBO 4.0 Vdc Vdc Vdc NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. Oilrilitv
28 Vdc
Figure 1. 400 MHz Test Circuit