MRF327 NJSEMI | Alldatasheet
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Technical content
<^s,m.i-Contiu.ctoi ZPtoauati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor ... designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz
- Built-in Matching Network for Broadband Operation Using Double Match Technique
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
- Gold Metallization System for High Reliability Applications « Characterized for 100 to 500 MHz MAXIMUM RATINGS MRF327 SOW, 100 to 500 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous — Peak Total Device Dissipation @ TC = 25°C (1 ) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 4.0 9.0 250 1.43 -65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °f* THERMAL CHARACTERISTICS CASE 316-01, STYLE 1 Characteristic Thermal Resistance, Junction to Case Symbol Rejc Max 0.7 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1C = 80 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (lc = 80 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, lc = 0) Collector-Base Breakdown Voltage (lc = 80 mAdc, lc = 0) Collector Cutoff Current (VCB = 30 vdc, IE = o> V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO 4.0 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS I DC Current Gain (lc = 4.0 Adc, VCE = 5.0 Vdc) hFE DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1 .0 MHz) Cob 125 PF NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Figure 1. 400 MHz Test Circuit