MRF321 NJSEMI | Alldatasheet
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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
- Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50% Min
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
- Gold Metallization System for High Reliability
- Computer-Controlled Wirebonding Gives Consistent Input Impedance MAXIMUM RATINGS MRF321 10W, 400MHz RF POWER TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous — Peak Total Device Dissipation @ TA = 25°C (1) Derate above 25"C Storage Temperature Range Symbol VCEO VCBO VEBO lc PD Tstg Value 4.0 1.1 1.5 160 -65to+150 Unit Vdc Vdc Vdc Adc Watts mW/"C CASE 244-04, THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RBJC Max 6.4 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (lc = 20 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (lc = 20 mAdc, VBE = 0) Collector-Base Breakdown Voltage (lc = 20 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 2.0 mAdc, lc = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 4.0 1,0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (lc = 500mA, VCE = 5.0Vdc) HFE NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Figure 1. 400 MHz Test Circuit Schematic