MRF233 NJSEMI | Alldatasheet

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J ZPioduoti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 378-8960 MRF233 (SILICON) The R.F Line NPN SILICON RF POWER TRANSISTORS ...designed for 12.5 Volt, mid-band large-signal amplifier appli- cations in industrial and commercial FM equipment operating in the 40 to 100 MHz range.

  • Specified 12.6 Volt, 90 MHz Characteristics - Output Power - 1 5 Watts Minimum Gain - 10 dB Efficiency - B5%
  • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Characterized with Parallel Equivalent Large-Signal Impedance Parameters MAXIMUM RATINGS Rating Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dinipation ej>Tc- 26°C HI Derate Above 25°C Storage Temperature Range Stud Torque 12] THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PD T«g Symbol B8JC Velue 4.0 3.5 SO 285 -65 to +200 6.5 Max Unit Vdc Vdc Vdc Adc Watts m«/°C In-lb Unit °C/W (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as Class C RF amplifiers. (21 For Repeated Assembly use 6 In. Lb.

15 W- 90 MHz

!_[ n^M r -i A r J — i — ; — SEATING PLANE-/ * =?*- IL. 1 , , - f t TTi -Jpi 1 ""fii u \\H FLAT '-—JU-i » smt i PIN 1 EMITTER

2 BASE

3 EMITTER

4 COLLECTOR

MILLII (Tin I"C A 940 978 0.370 6 8.13 13 C 11.03 190 0 S.59 5.1 1 1.79 2.0 - 0.320 0.71J o.?4$ I 0.070 T- 2.79 Ti2"iuo- Hr^orrT^ K 13.21 14.3" t 1.40 !.«• M 45° IDM P - 1.2 H 7.59 7J I 4.0 « T 2.1 2.4 U U 3.3 iW4 0.^0 ILOS5 45» _42 _ I M - .It . rUsr p 385 0.330 0.010 Jt»L 1.130 0.006 0.5S5 0.0(5 ON t-m 9-w 0.171 -Ufi- 1nar NOTE CASE14WDI USE I32NC2A STUD CASE 146A 01 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished b> N.f Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \\ Semi-Conductors entourages customers to verify that datasheets nre current before placing orders.

MRF233 (continued) ELECTRICAL CHARACTERISTICS!^ - 25°C unless otherwise noted). Character inte Symbol I Typ | Max I Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1C- lOOmAdc, IB-O) Collector-Emitter Breakdown Voltage (1C- 50 mAdc. VB£ - 0) Emitter-Base Breakdown Voltage (IE -5.0 mAdc, l<;-0) Collector Cutoff Current (VCB- 15 Vdc. IE-O) BVCEO BVcES BVEBQ ICBO 4.0 1.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain He • 1 0 Adc, Vce • 5.0 Vdcl "FE 5.0 DYNAMIC CHARACTERISTICS Output Capacitance (VCB • 12-s Vdc- 'E • o. f - 1 o MH*> FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain I VCC • 12.5 Vdc, Pout - 16 W, f - 90 MHzl Collector efficiency (VCC • 12.5 Vdc, Pou, • 15 W, f " 90 MHz) Load Mismatch (Vcc • 12-5 Vdc, Pout - 15 W. «-90MHr, Tc<J6°CI cob GPE 100 120 pf= dB VSWR > 30: 1 Through All Phate Angles in a 3 Second Interval After Which Devices Will Meet Gpg Test Limits FIGURE 1 • 90 MHz TEST CIRCUIT SCHEMATIC C1.C3 9.0-180 pF, ARCO 463 C2,C4 26-280 pF ARCO 464 CG IOOODF UNEI.CO C6 0.01 llF ERIE DiK C.romlc C7 1.0 ^*F, 35 Vdc TANTALUM LI 2 Turns, »18 AWO. 3/8" I.D., 1/4" Lon» L2 0.22 MH, 9230-04 MILLER MolO.d Choke 3 2 HH, 9230 200 MILLER Molded Choke 2 Turns, ff^8 AWG. 3/8" I.D., 3/8" Long 10 Turns. #16 AWG, Wound On R2.

1 Ei Ohm, 1 /2 W, 10% Cvbon

68 Ohm, 1 W*tt, 10K Carbon

nput/Output Connectors - Type BNC