MRF21010LR1 NJSEMI | Alldatasheet
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<£e.mi-Conclu<2koi ^Product*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 378-8960 The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. . Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.5 dB Efficiency — 21%
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness . Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
- Excellent Thermal Stability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
- Low Gold Plating Thickness on Leads. L Suffix Indicates 40|j" Nominal. MRF21010LR1 MRF21010LSR1 2170MHz, 10 W, 28V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 360B-05, NI-360 MRF21010LR1 CASE 360C-05, NI-360S MRF21010LSR1 MAXIMUM RATINGS Rating Drain -Source Voltage Gate -Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg . Tj Value - 0.5, +15 43.75 0.25 - 65 to +150 200 Unit Vdc Vdc W w/°c THERMAL CHARACTERISTICS ESD PROTECTION CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Rejc Max 5.5 Unit °C/W Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc. GG R1 _L l=l 1 JC3 JC4
- =• J_ V $ — CD-.— c=i- r i r I" Z1 0.964" Z2 0.905" Z3 0.433" 24 1 .068" 25 0.752" R2 J^ 1 ^ T"C5 Tee I [I Z4 Q Z5 II 1 1 OUT 7fi S7-~\\- (IP) "= 11 1 1 * v_ ' x 0.087" Microstrip Z6 x 0.087" Microstrip Z7 x 0.51 2" Microstrip Z8 x 0.087" Microstrip PCB x 0.087" Microstrip 1 1+ _b ^ ~TC7 Tc8 T~C9 Z7 Z8 — ii — cm — C10 0.453" x 1.118" Microstrip 0.921" x 0.154" Microstrip 0.925" x 0.087" Microstrip Taconic TLX8-0300, 0.030", £r = 2.55 VDD OUTPUT I
Figure 1. MRF21010LTest Circuit Schematic Table 1. MRF21010L Test Circuit Component Designations and Values
Description
2.2 pF Chip Capacitor, B Case 1 .8 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case 10 nF, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors, B Case 5.6 pF Chip Capacitors, B Case 470 nF, 63 V Electrolytic Capacitor 10 pF Chip Capacitor, B Case Type N Connector Flange Mounts 1 .0 kQ Chip Resistor (0805)
12 Q Chip Resistor (0805)
Value, P/N or DWG 100B2R2BW 100B1R8BW 100BOR5BW 293D106X9035D2T 100B102JW 100B5R6BW 100B100GW 3052-1648-10 Manufacturer ATC ATC ATC Sprague-Vishay ATC ATC ATC Macom * Piece part depending on eared / earless version of the device. VGG RF Input © MRF21010 © C-XM-00-001-01 RF Output Figure 2. MRF21010L Test Circuit Component Layout
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain -Source Breakdown Voltage (VGS = 0 Vdc, ID =10 nA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate -Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) V(BR)DSS bss 'GSS Vdc uAdc uAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS=10V, !D = 50u:A) Gate Quiescent Voltage (VDS = 28 V, ID = 1 00 mA) Drain -Source On -Voltage (VGS= 10V, ID = 0.5 A) Forward Transconductance (VDS=10V, ID = 1 A) vGS(th) VGS(Q) VDS(on) 9fs 2.5 2.5 0.4 0.95 4.5 0.5 Vdc Vdc Vdc S DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 28 Vdc, VQS = 0, f = 1 MHz) Crss PF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pou, = 10 W PEP, I DQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 =2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pou, = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 =2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) Common -Source Amplifier Power Gain (VDD = 28 Vdc. pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 21 70 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps IMD IRL P1dB Gps V 13.5 -35 -12 -30 -10 dB dBc dB W dB No Degradation In Output Power Before and After Test
D t p t H
- *- B (FLANGE) 2X D _ Q — n «— »• / 2X 0 Q H L2X K NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PERASMEY14.5M-1994. 2. CONTROLLING DIMENSION: INCH, 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY bbb® T A ® B(M) R (LID) (LID) ccc® T A (M) B® |T|A®|B( \\ — 4 M NSULATO — A T t ril SEATING LU PLANE A®|B® S (INSULATOR) aaa® T A ® B( DIM A B C D E F G H K M N R S aaa bbb ccc INCHES HIN 0.795 0.225 0.125 0.210 0.055 0.004 0.562 0.077 0.220 0.355 0.357 0.125 0.227 0.225 MAX 0.806 0.23S 0.175 0.220 0.066 0.006 BSC 0.087 0.250 0.365 0.363 0.135 0.233 0.235
0.005 REF
0.01 OREF
0.015 REF
20.19 6.72 3.18 5.33 1.40 0.10 14.28 1.96 5.59 9.02 9.07 3.18 5.77 5.72 MAX 20.45 5.97 4.45 5.59 1.65 0.15 BSC 2.21 6.35 9.27 9.22 3.43 5.92 5.97
0.13 REF
0.25 REF
0.38 REF
STYLE): PIN1. DRAIN 2. GATE 3. SOURCE CASE360B-05 ISSUE F NI-360 MRF21010LR1 (FLANGE! (FLANGE) U^ 21 2X D fbbb®|T| R (LID) T A ® B® PIN3 (LID) CCC® T A i l SEATING PLANE (INSULATOR) bbb® T 360C-05 ISSUE D NI-360S MRF21010LSR1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PERASMEY14.5U-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0 762) AWAY FROM PACKAGE BODY. DIM A B C E F H K M N R S aaa bbb ccc INCHES MIN 0.375 0.225 0.105 0.210 0.035 0.004 0.057 0.085 0.355 0.357 0.227 0.225 MAX 0.385 0.235 0.155 0.220 0.045 0.006 0.067 0.115 0.365 0.363 0.23 0.235
0.010 REF
9.53 5.72 2-67 5.33 0.89 0.10 1.45 2.16 9.02 9.07 5.77 5.72 MAX 9.78 5.97 3.94 5,59 1.14 0.15 1.70 2.92 9.27 9.22 5.92 5.97 0.1 3 REF STYLE 1: PIN1. DRAIN
2 GATE
- SOURCE