MRF207

MRF207 NJSEMI | Alldatasheet

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<£e.mi-(landuai oi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF207, MRF208, MRF209 (S.L>CON) TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF Line NPN SILICON RF POWER TRANSISTORS . . . designed for 12.5 Volt large-signal power amplifier applications in communications equipment operating at 220 MHz.

• Specified 1 2.5 Volt, 220 MHz Characteristics - Output Power = 1.0 W - MRF207 10W-MRF208

25 W- MRF209

Minimum Gain = 8.2 dB — MRF207 10dB-MRF208 4.4dB-MRF209

• Balanced-Emitter Construction to provide the designer with the de- vice technology that assures ruggedness and resists transistor damage caused by load mismatch. MAXIMUM RATINGS Rating Symbol MRF20 Collector-Emitter Voltage VCEO " ' Collector-Bata Voltage VCBO * Emitter-Bate Voltage ^EBO ' Collector Current -Continuous <c 04 Total Device Dissipation ®TC-250CH> PD 3.5 Derate above 25° C 20 Storage Temperature Rang* Tsw Stud Torque' 'I

7 MRF208J MRF209 Unit

36 . Vdc

4.0 Vdc

2.0 4.0 Adc 37.5 50 Watts 214 286 mvW°C -65 to +2OO °C 6.S in. Ib. ID These devices are designed for RF operation. Tha total device dissipation rating applies only when the devices are operated as RF amplifier!. {2) For Repeated Assembly use 5 in. Ib. 1.0, 10, 25 WATTS - 220 MHz NPN SILICON RF POWER TRANSISTORS MRF207 MRF208 MRF209 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished bv N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use VI Semi-Conductors encourages customers to verity that datasheets lire current before placing orders.

MRF207, MRF208, MRF209 (continued) ELECTRICAL CHARACTERISTICS (Tc = 2S°C unless otherwise noted) Characteristic Symbol Typ | Unit [ OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (lc = 50 mAdc, IB = 01 MRF207 (1C = 15 mAdc, IB = 0) MRF208 (IC = 20 mAdc, IB "01 MRF209 Collector-Base Breakdown Voltage (1C =2.0 mAdc. IE = 01 MRF207 (1C =5.0 mAdc. IE = 0) MRF208 (1C - 10 mAdc. IE =0) MRF209 Emitter-Base Breakdown Voltage (IE = I.OmAdc. lc = 01 MRF207 (IE =2.5 mAdc. lc =01 MRF208 (IE = 5.0 mAdc. lc = 0) MHF209 Collector Cutoff Current (Vce = 15 Vdc, IE = 0) MRF207 MR F 208 MRF209 BVcEO BVCBO BVEBO ICBO 4.0 4.0 025 0.5 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain lie - 100 mAdc, VCE = 5.0 Vdc) MRF207 (lc» 250 mAdc. VCE =5.0 Vdc) MRF208 dC - 500 mAdc. VCE = 5.0 Vdcl MRF209 "FE 5.0 5.0 5.0 FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain <Vcc = '25 Vdc. Pout = LOW. ( = 220 MHz) MRF207 (VCc = U5 Vdc. Pou, = 10 W. f- 220MHz) MRF208 (VCC • 12.5 Vdc. Pout = 25 W.f -220MHz) MR F 209 Input Impedance (Pou, = 1.0 W.f - 220MHz) MRF207 |pout = 10W. f - 220MHz) MRF208 (Pout = 25 W.f > 220MHz) MRF209 Output Impedance <pout • 10 W.f " 220MHz) MRF207 lpout = 10 W.f - 220 MHz) MRF208 (pout " 25 W.f = 220MHzl MRF209 CPE Zin ^out 8.2 4.4 12.5 12.5 5.2 10-J11.5 1.4t,1.4 1 .4+j 1 .8 32- J41 57 -ji.3 3.9-J0.2 dB Ohms Ohms

220 MHz TEST CIRCUIT

FIGURE 2 - MRF208. MRF209 C1 20 50 pF ARCO 461 C2. C4 5.0 SO pf ARCO 462 C3 1 5 15 pF ARCO 460 C5 40 CF C6 1000 pF C7 5.0MF TANTALUM L1 1 Turn. #20 AWG. 1/4" ID L2 4 Turns. *20 AWG. 1/4 ID L3. L4 15 MH RFC C1.C2.C3.C4 5 0 • 80 pF AH CO .162 C5. C6 lOOpF C7 10MF TANTALUM C8 1000 pF L1 #14 AWG, 1 %" LOnfl. Straight L2 1 Turn. #14 AWG. 3/8" ID L3. L4 RFC UK200