MRF141G NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
LPioaucti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands,
- Guaranteed Performance at 175 MHz, 28 V: Output Power — 300 W Gain —12dB(14dBTyp) Efficiency — 50%
- Low Thermal Resistance — 0.35°C/W
- Ruggedness Tested at Rated Output Power
- Nitride Passivated Die for Enhanced Reliability s (FLANGE) MAXIMUM RATINGS MRF141G
300 W, 28V, 175MHz
CASE 375-04, Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current — Continuous Total Device Dissipation © TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg Tj Value ±40 500 2.85 -65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RWC Max 0.35 Unit °c/w NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Quality Semi-Conductors
, LJ na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noled) Characteristic Symbol Mln TVP Max Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGs = 0, b = 100mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 5.0 1.0 Vdc mAdc (jAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10V, ID = 100mA) Drain-Source On-Voltage (VGS = 10V, ID = 10 A) Forward Transconductance (VDS = 10V, ID = 5.0 A) VGS(HI) VoS(on) 9(5 1.0 0.1 5.0 3.0 0.9 7.0 5.0 1.5 Vdc Vdc mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28V, VGS = 0,1 = 1.0 MHz) Output Capacitance (VDS = 28 V, VQS = 0, f = 1 .0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 .0 MHz) Ciss GOES Crss 350 420 pF PF pF FUNCTIONAL TESTS (2) Common Source Amplifier Power Gain (VDD = 28 V. Pou, = 300 W, IDQ = 500 mA, f = 175 MHz) Drain Efficiency (VDD = 28 V, Poul = 300 W, f = 1 75 MHz, ID (Max) = 21 .4 A) Load Mismatch (VDD = 28 V. Pou, = 300 W, IDQ = 500 mA, f = 175 MHz, VSWR 5:1 at all Phase Angles) Gps TI V dB No Degradation in Output Power NOTES: 1. Each side measured separately. 2. Measured in push-pull configuration. Quality Semi-Conductors