MRF136 NJSEMI | Alldatasheet
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na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF TMOS Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode TMOS designed for wideband large-signal amplifier and oscillator applications in the 2 to 400 MHz range, in either single ended or push-pull configuration.
- Guaranteed 28 Volt, 150 MHz Performance MRF13B MRF136Y Output Power = 15 Watts Output Power = 30 Watts Narrowband Gain = 16 dB (Typ) Broadband Gain - 14 dB (Typ) MRF136 MRF136Y
15 W, 30 W 2-400 MHz
Efficiency = 60% (Typical)
- Small-Signal and Large-Signal Characterization
- 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
- Space Saving Package For Push-Pull Circuit » Excellent Thermal Stability, Ideally Suited For Class A Operation
- Facilitates Manual Gain Control, ALC and Modulation Techniques MAXIMUM RATINGS Efficiency = 54% (Typical) MRF136 OS MRF136 Biting ^Drain-Source Voltage Drain-Gate Voltage (RQS = 1 Mill Gate-Source Voltage Brain-Current — Continuous Total Device Dissipation w TC = 25°C Derate above 25°C _j'°rage Temperature Range ^Operating Junction Temperature Symbol VDSS VDGR VGS ID PD T»tg Tj Vuluc MRF136 MRF136V ±40 2.5 0.314 100 0.571 -65 to +150 200 Unit Vdc Vdc Vdc Adc Want W/°C HJERMAL CHARACTERISTICS Quricteriitie .jjgrnal Resistance. Junction to Case Symbol RSJC Mix MRF136 3.2 MRF136Y 1.75 Unit
- c/w B and Packaging — MOS dsvicei are tutcaptibla to damage from elcctroitatic charg*. ft»«»on«bl« prectution* in handling and packaging MOS Quality Semi-Conductors
MRF136, MRF136Y ELECTRICAL CHARACTERISTICS (Tc - 25°C unleu othenwne noted) Chincterlitlc Symbol TVP Mix Untt OFF CHARACTERISTICS (NOTE 1) Drain-Source Breakdown Voltage (VQS - 0. ID • 5 mA) Zero-Gate Voltage Drain Current (VDS - 28 V, VGS - 01 Gate-Source Leakage Current (VGS = 40 v, VDS - 01 VIBRIDSS IDSS IGSS Vdc mAde AiAdc ON CHARACTERISTICS (NOTE 1) Gate Threshold Voltage (VDS = 10 v, ID - 25 mAi Forward Transconductance (VDS = 10 v. ID - 250 mA) VGS(th) 250 400 Vdc fflrflnOS DYNAMIC CHARACTERISTICS (NOTE 1) Input Capacitance (VDS = 28 v, VQS = o, f = i MH'> Output Capacitance (VDS = 28 v, VQS = o, i = i MHZ) Reverse Transfer Capacitance (vos - 28 v, VGS - "• ' - 1 MHz> Cis. '•oat Cr.a 5.5 pF pF PF FUNCTIONAL CHARACTERISTICS (NOTE 2) Noise Figure MRF136 (VDS = 28 Vdc. ID = 500 mA, f = 150 MHz) Common Source Power Gain (Figure 1) MRF136 (VDD = 28 Vdc. Pout = 16 W, f = 180 MHz, IDQ = 25 mA) Common Source Power Gain (Figure 2) MRF136Y (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA) Drain Efficiency (Figure 1) MRF136 (VDD = 28 Vdc, Pout = 15 W, f » 150 MHz, IDQ - 25 mA) Drain Efficiency (Figure 2) MRF136Y (VDD = 28 Vdc, Pout = 30 W. f = 150 MHz, IDQ = 100 mA) (VDD = 28 Vdc. Pout = 15 W, f = 150 MHz, IDQ - 25 mA, VSWR 30:1 at all Phase Angles) (VDD • 28 Vdc, Pout - 30 W, f = 150 MHz. I0Q = 100 mA, VSWR 30:1 at all Phase Angles) NF Gps GP« </> dB dB dB No Degradation in Output Power No Degradation in Output Power Notn: 1. For MRF138Y, each lid. muiurtd Mparattly. 2. For MRF136Y meaiured in puih-pull configuration.