MRF134 NJSEMI | Alldatasheet

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tSsmi-donduato'i ZPtoaucti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode .. . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range.

  • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency — 55% (Typical)
  • Small-Signal and Large-Signal Characterization
  • Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain
  • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR « Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz
  • Excellent Thermal Stability, Ideally Suited For Class A Operation MAXIMUM RATINGS MRF134

5.0 W, to 400 MHz

CASE 211-07, Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 -0 MQ) Gate-Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VDS$ VDGR VGS ID PD Tstg Value ±40 0.9 17.5 0.1 -65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RSJC Value Unit °c/w Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. NJ Semi-Conductois reserves the right to change test conditions, parameter limits and package dimensions without not.ce. fnformat,on furnished b> NJ Semi-Conductors is believed to be both accurate L reliable at the tL o?go ng to p««. However, NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use M .Vrm-( unductors entourages customers to verify that datasheets are current before placing orders. OiinlJfv

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Win Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VQS = 0) Gate-Source Leakage Current (Vgs = 20 V, VDS = °) V(BR)DSS !DSS !GSS 1.0 1.0 Vdc mAdc u.Adc ON CHARACTERISTICS Gate Threshold Voltage (!Q = 10 mA, VDS = 10 V) Forward Transconductance (VDS = 10 V, ID = 100 mA) vGS(th) 9fs 1.0 3.5 110 6.0 Vdc mmhos DYNAMIC CHARACTERISTICS Input Capacitance (vDs = 28 v. VGS = o, f = 1 .0 MHZ) Output Capacitance (VDS = 28 v- VGS = o, f = 1 .0 MHZ) Reverse Transfer Capacitance (VDS = 28 v, VGS = o, f = 1 .0 MHZ) Cjss CQSS crss 7.0 9.7 2.3 PF pF PF FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 28 Vdc, ID = 200 mA, f = 150 MHz) Common Source Power Gain (VDD = 28 Vdc, Pout = 5.0 W, IDQ = 50 mA) f =150 MHz (Fig. 1) f = 400 MHz (Fig. 14) Drain Efficiency (Fig. 1) (VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA) Electrical Ruggedness (Fig. 1) (VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA, VSWR 30:1 at all Phase Angles) NF Gps V 2.0 10.6 dB dB No Degradation in Output Power RF INPUT] R3* ' v R4 x 'WV— (-7 k T° J"1 ^ L3^ 1 ™ 1 1 ^ i C5 ?k C6 1 t • <m * L1 Mw^ s yr • ~-YVV 1 1 1 !*n / /^l T C1 ly *Bias Adjust -ill 1 /-p C8 rr\\9 R5| 1 n -T* T x uu C10 C11 r r-1 -L C4 , / OUT ? fa C1.C4 —Arco406, 15-115 pF C2 —Arco403, 3.0-35 pF C3 —Arco402, 1.5-20pF C5, C6, C7, C8, C12 — 0.1 nF Erie Redcap C9 — 10 nF, 50V C10, C11 —680 pF Feedthru D1 — 1N5925A Motorola Zener L1 — 3 Turns, 0.310" ID, #18 AWG Enamel, 0.2" Long L2 — 3-1/2 Turns, 0.310" ID, #18 AWG Enamel, 0.25" Long L3 — 20 Turns, #20 AWG Enamel Wound on R5 L4 — Ferroxcube VK-200 — 19/4B R1 — 68 O, 1.0 W Thin Film R2 — 10 kQ, 1/4 W R3 — 10 Turns, 10 k£i Beckman Instruments 8108 R4 — 1.8kQ, 1/2 W R5 — 1.0 M£J, 2.0 W Carbon Board —G10,62 mils Figure 1.150 MHz Test Circuit