MRF10502 NJSEMI | Alldatasheet
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, L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF10502 Product Image Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters.
- Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.)
- 100% tested for load mismatch at all phase angles with 10:1 VSWR
- Hermetically sealed industry package
- Silicon nitride passivated
- Gold metalized, emitter ballasted for long life and resistance to metal migration
- Internal input and output matching
- Characterized with 1Ou.s, 1 % duty cycle pulses CASE 355J-02, MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C urrent — Peak ( 1 ) Total Device Dissipation @ TQ = 25°C (1 ), (2) Derate above 25':'C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IG PD Tstg Tj Value 3.5 1460 8.3 -65to+200 200 Unit Vdc Vdc Vdc Adc Watts W/'-'C i:C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RSJC Max 0.12 Unit
- c/w NOTES: 1. Under pulse RF operating conditions- 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case 6jc value measured® 32 us, 2%.) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. VI Semi-Conductors encourages customers to verify that datasheets (ire current before placing orders. !•• 1^4 I ft X ^* •
ELECTRICAL CHARACTERISTICS (Jc = 25"C unless otherwise noted.) Characteristic Symbol Win Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 60 mAdc, Vgrf = 0) Collector-Base Breakdown Voltage (Ic = 60 mAdc, IE = 0) Emitter-Base Breakdown Voltage (Ig = 10 mAdc, Ic - 0) Collector Cutoff Current (VCB = 36 Vdc. IE = 0) V(BR)CES V(BR)CBO V(BR)EBO 'CBO 3.5 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gam (Ic = 5.0 Adc, Vcg = 5.0 Vdc) hFE FUNCTIONAL TESTS Common-Base Amplifier Power Gain (Vcc = 50 Vdc. Pout = 500 W Peak, f = 1090 MHz) Collector Efficiency (Vcc = SO Vdc. Pout = 500 W Peak, f = 1 090 MHz) Load Mismatch (Vcc = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB n V 8.5 9.0 dB No Degradation in Output Power