MRF10031 NJSEMI | Alldatasheet

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Technical content

J , O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line Microwave Long Pulse Power Transistor Designed for 960-1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode-S transmitters. . Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ)

  • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
  • Hermetically Sealed Industry Standard Package
  • Silicon Nitride Passivated
  • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
  • Internal Input Matching for Broadband Operation TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF1OO31

30 W (PEAK)

Collector-Base Voltage (1) Emitter-Base Voltage Collector Current — Continuous (1) Total Device Dissipation @ Tc = 25"C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO Ic PD Tstg Tj Value 3.5 3.0 110 0.625 - 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts mW/'C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol ROJC Max 1.6 Unit C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case BJC value measured @ 23% duty cycle) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors

36 Vdc

  • -* .113 t .215 .218 in — H .354 .100 .083

Figure 1. Test Circuit