MRF1001A NJSEMI | Alldatasheet
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.zSsmi-donduakoi ZPiodudi, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF1001A ELECTRICAL SPECIFICATIONS (Tease - 25°C) STATIC [Off] Symbol BVCEO BVEBO BVCBO ICBO VCE(sat) Test Conditions Collector-Emitter Breakdown Voltage (1C = 5.0 mAdc) Emitter-Base Breakdown Voltage (IC= 0.1 mAdc) Collector-Base Breakdown Voltage (IC=1.0mAdc) Collector-Base (VCB= 10Vdc) Collector-Emitter Saturation Voltage (1C = 50mA, IC/IB = 10) Value Min. 3.5 Typ. 100 Max. Unit Vdc Vdc Vdc MA mV (on) HFE DC Current Gain (1C = 50 mAdc, VCE = 5.0 Vdc) 300 DYNAMIC Symbol fi Test Conditions Current-Gain - Bandwidth Product (1C = 90 mAdc, VCE = 14 Vdc, f = 300 MHz) Value Min. Typ. 3.0 Max. Unit GHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \\ Semi-Conductors enuniniges customers to verify that datasheets nre current before plating orders.
Table 1. Common Emitter S-Parameters, @ VCE = 14 V, 1C = 90 mA
A B C D E F G H MINIMUM INCHES/MM .350/8,89 .315/8,00 .240/6,10 .015/0,38 MAXIMUM INCHES/MM .370/9,40 .335/8,51 .260/6,60 .045/1,14 .500/12,70 .016/0,41 .029/0,74 .028/0,71 .019/0,48 .040/1,02 .034/0,86 J K L MINIMUM INCHES/MM .095/2,41 .095/2,41 .190/4,83 MAXIMUM INCHES/MM .105/2,67 .105/2,67 .210/5,33