MRA1000-7L NJSEMI | Alldatasheet

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Technical content

!j£Ti£u <^£mi-Condu.d:oi ^Products., C/ t/ The RF Line UHF Power Transistor .. . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz.

  • Designed for Class A Linear Power Amplifiers
  • Specified 19 Volt, 1000 MHz Characteristics: Output Power — 7.0 Watts Power Gain — 9.0 dB Min, Small-Signal
  • Built-in Matching Network for Broadband Operation
  • Gold Metallization for Improved Reliability
  • Diffused Ballast Resistors
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS MRA10OO-7L 9.0 dB, TO 1000 MHz

7.0 WATTS BROADBAND

Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tsta Value 3.5 0.25 200 -65 to +150 Unit Vdc Vdc Vdc Watts W/°C THERMAL CHARACTERISTICS CASE 145D-02, (.380 SOE) Characteristic Thermal Resistance, Junction to Case (Tc = 70°C) Symbol RSJC Max 4.0 Unit °C/W

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Ic = 20 mA, IB = 0) Collector-Emitter Breakdown Voltage (Ic = 20 mA, VBE = 0) Collector-Base Breakdown Voltage (Ic = 20 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mA, Ic = 0) Collector Cutoff Current (VCB = 19 V, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO !CBO 3.5 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS | DC Current Gain (Ic = 1.0 A, VCE = 5.0 V) DYNAMIC CHARACTERISTICS | Output Capacitance (VpB = 24 V, IE = 0. f = 1.0 MHz) Cob PF FUNCTIONAL TESTS Common-Emitter Amplifier Small-Signal Gain (VCE = 19V, f= 1.0 GHz, lc = 1.2A) Load Mismatch (VCE = 19V, IC = 1-2 A, Pout = 7.0W, f = 1.0 GHz, Load VSWR = °°:1 , All Phase Angles) Overdrive (VCE = 19 V, Ic = 1 -2 A, f = 1 .0 GHz) (No degradation) Output Power, 1 .0 dB Compression Point (VCE = 19V, f = 1.0 GHz, lc = 1.2A) GSS V Pinover Po1 dB 9.0 dB No Degradation in Output Power 7.0 3.5 W W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without to "ss t^TT* rb> HH' Semi-C°nduct0rs is *»«««« * be both accurate L re.fab.e~LTg°o ng NI Sen i- r T , Seml-Conductors assumes ™ responsibility for any errors or omissions discovered in its use M Semiconductors encourages customers to verify that datasheets are current before placing orders. Ounlitv

c 1 -1 A 1- 1 1 t M r n t H t 8-32UNC-2A ^ ,JLT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION: INCH. DIM A B C D H J K R V W INCHES WIN 0.320 0.320 0.700 0.220 0.160 0.003 0.490 0.248 0.100 0.055 MAX 0.385 0.330 0.778 0.230 0.170 0.006 0520 0.275 0.130 0.065 MILLIMETERS WIN 9.28 8.13 17.78 5.59 4.07 0.08 12.45 6.30 2.54 1.40 MAX 9.77 8.38 19.76 5,84 4.31 0.15 13.20 7.23 3.30 1.65 STYLE 1: PIN 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR CASE 145D-02 ISSUE A