MR18R16224DF0

MR16R1622DF0 SAMSUNG | Alldatasheet

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Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet

Page 1 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applica- tions including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to

1066 MHz transfer rates while using conventional system

and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device.

Features

♦ High speed up to 1066 MHz RDRAM storage ♦ 184 edge connector pads with 1mm pad spacing ♦ Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module ♦ Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”) - 256Mb and 288Mb base PC1066 RIMM Module ♦ Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively ♦ Gold plated edge connector pad contacts ♦ Serial Presence Detect(SPD) support ♦ Operates from a 2.5 volt supply (±5%) ♦ Powerdown self refresh modes ♦ Separate Row and Column buses for higher efficiency ♦ WBGA package (92 balls) Key Timing Parameters/Part Numbers The following table lists the frequency and latency bins available for RIMM modules. Table 1: Part Number by Freq. & Latency Form Factor The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connec- tors. Figure 1 below, shows a sixteen device RIMM module. Organization Speed Part Number Bin I/O Freq. (MHz) tRAC (Row Access Time) ns 32M x 16/18 -CT9 1066 32P MR16/18R1622DF0-CT9 -CN9 1066 32 MR16/18R1622DF0-CN9 -CM9 1066 35 MR16/18R1622DF0-CM9 -CM8 800 40 MR16/18R1622DF0-CM8 -CK8 800 45 MR16/18R1622DF0-CK8 64M x 16/18 -CT9 1066 32P MR16/18R1624DF0-CT9 -CN9 1066 32 MR16/18R1624DF0-CN9 -CM9 1066 35 MR16/18R1624DF0-CM9 -CM8 800 40 MR16/18R1624DF0-CM8 -CK8 800 45 MR16/18R1624DF0-CK8 128M x 16/18 -CT9 1066 32P MR16/18R1628DF0-CT9 -CN9 1066 32 MR16/18R1628DF0-CN9 -CM9 1066 35 MR16/18R1628DF0-CM9 -CM8 800 40 MR16/18R1628DF0-CM8 -CK8 800 45 MR16/18R1628DF0-CK8 256M x 16/18 -CT9 1066 32P MR16/18R162GDF0-CT9 -CN9 1066 32 MR16/18R162GDF0-CN9 -CM9 1066 35 MR16/18R162GDF0-CM9 -CM8 800 40 MR16/18R162GDF0-CM8 -CK8 800 45 MR16/18R162GDF0-CK8 Figure 1: RIMM Module shown with heat spreader removed Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB. (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18)*2(4/8/16)pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

Page 2 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Table 2: Module Pad Numbers and Signal Names Pin Pin Name Pin Pin Name Pin Pin Name Pin Pin Name A1 Gnd B1 Gnd A47 NC B47 NC A2 LDQA8 B2 LDQA7 A48 NC B48 NC A3 Gnd B3 Gnd A49 NC B49 NC A4 LDQA6 B4 LDQA5 A50 NC B50 NC A5 Gnd B5 Gnd A51 Vref B51 Vref A6 LDQA4 B6 LDQA3 A52 Gnd B52 Gnd A7 Gnd B7 Gnd A53 SCL B53 SA0 A8 LDQA2 B8 LDQA1 A54 Vdd B54 Vdd A9 Gnd B9 Gnd A55 SDA B55 SA1 A10 LDQA0 B10 LCFM A56 SVdd B56 SVdd A11 Gnd B11 Gnd A57 SWP B57 SA2 A12 LCTMN B12 LCFMN A58 Vdd B58 Vdd A13 Gnd B13 Gnd A59 RSCK B59 RCMD A14 LCTM B14 NC A60 Gnd B60 Gnd A15 Gnd B15 Gnd A61 RDQB7 B61 RDQB8 A16 NC B16 LROW2 A62 Gnd B62 Gnd A17 Gnd B17 Gnd A63 RDQB5 B63 RDQB6 A18 LROW1 B18 LROW0 A64 Gnd B64 Gnd A19 Gnd B19 Gnd A65 RDQB3 B65 RDQB4 A20 LCOL4 B20 LCOL3 A66 Gnd B66 Gnd A21 Gnd B21 Gnd A67 RDQB1 B67 RDQB2 A22 LCOL2 B22 LCOL1 A68 Gnd B68 Gnd A23 Gnd B23 Gnd A69 RCOL0 B69 RDQB0 A24 LCOL0 B24 LDQB0 A70 Gnd B70 Gnd A25 Gnd B25 Gnd A71 RCOL2 B71 RCOL1 A26 LDQB1 B26 LDQB2 A72 Gnd B72 Gnd A27 Gnd B27 Gnd A73 RCOL4 B73 RCOL3 A28 LDQB3 B28 LDQB4 A74 Gnd B74 Gnd A29 Gnd B29 Gnd A75 RROW1 B75 RROW0 A30 LDQB5 B30 LDQB6 A76 Gnd B76 Gnd A31 Gnd B31 Gnd A77 NC B77 RROW2 A32 LDQB7 B32 LDQB8 A78 Gnd B78 Gnd A33 Gnd B33 Gnd A79 RCTM B79 NC A34 LSCK B34 LCMD A80 Gnd B80 Gnd A35 Vcmos B35 Vcmos A81 RCTMN B81 RCFMN A36 SOUT B36 SIN A82 Gnd B82 Gnd A37 Vcmos B37 Vcmos A83 RDQA0 B83 RCFM A38 NC B38 NC A84 Gnd B84 Gnd A39 Gnd B39 Gnd A85 RDQA2 B85 RDQA1 A40 NC B40 NC A86 Gnd B86 Gnd A41 Vdd B41 Vdd A87 RDQA4 B87 RDQA3 A42 Vdd B42 Vdd A88 Gnd B88 Gnd A43 NC B43 NC A89 RDQA6 B89 RDQA5 A44 NC B44 NC A90 Gnd B90 Gnd A45 NC B45 NC A91 RDQA8 B91 RDQA7 A46 NC B46 NC A92 Gnd B92 Gnd

Page 3 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Table 3: Module Connector Pad Description Signal Pins I/O Type Description Gnd A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68, B70, B72, B74, B76, B78, B80, B82, B84, B86, B88, B90, B92 Ground reference for RDRAM core and interface. 72 PCB connector pads. LCFM B10 IR S L Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. LCFMN B12 IR S L Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. LCMD B34 IV CMOS Serial Command used to read from and write to the control registers. Also used for power management. LCOL4.. LCOL0 A20, B20, A22, B22, A24 IR S L Column bus. 5-bit bus containing control and address infor- mation for column accesses. LCTM A14 IR S L Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. LCTMN A12 IR S L Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. LDQA8.. LDQA0 A2, B2, A4, B4, A6, B6, A8, B8, A10 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQA8 is non-functional on modules with x16 RDRAM devices LDQB8.. LDQB0 B32, A32, B30, A30, B28, A28, B26, A26, B24 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQB8 is non- functional on modules with x16 RDRAM devices. LROW2.. LROW0 B16, A18, B18 IR S L Row bus. 3-bit bus containing control and address information for row accesses. LSCK A34 IV CMOS Serial Clock input. Clock source used to read from and write to the RDRAM control registers. NC A16, B14, A38, B38, A40, B40, A43, B43, A44, B44, A45, B45, A46, B46, A47, B47, A48, B48, A49, B49, A50, B50, A77, B79 These pads are not connected. These 24 connector pads are reserved for future use. RCFM B83 IR S L Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. RCFMN B81 IR S L Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. RCMD B59 IV CMOS Serial Command Input. Pin used to read from and write to the control registers. Also used for power management.

Page 4 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 RCOL4.. RCOL0 A73, B73, A71, B71, A69 IR S L Column bus. 5-bit bus containing control and address infor- mation for column accesses. RCTM A79 IR S L Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. RCTMN A81 IR S L Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. RDQA8.. RDQA0 A91, B91, A89, B89, A87, B87, A85, B85, A83 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQA8 is non-functional on modules x16 RDRAM devices. RDQB8.. RDQB0 B61, A61, B63, A63, B65, A65, B67, A67, B69 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQB8 is non-functional on modules x16 RDRAM devices. RROW2.. RROW0 B77, A75, B75 IR S L Row bus. 3-bit bus containing control and address information for row accesses. RSCK A59 IV CMOS Serial Clock input. Clock source used to read from and write to the RDRAM control registers. SA0 B53 IS V DD Serial Presence Detect Address 0. SA1 B55 IS V DD Serial Presence Detect Address 1. SA2 B57 IS V DD Serial Presence Detect Address 2. SCL A53 IS V DD Serial Presence Detect Clock. SDA A55 I/O SV DD Serial Presence Detect Data (Open Collector I/O). SIN B36 I/O V CMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO0 of the first RDRAM device on the module. SOUT A36 I/O V CMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO1 of the last RDRAM device on the module. SVDD A56, B56 SPD V oltage. Used for signals SCL, SDA, SWE, SA0, SA1 and SA2. SWP A57 IS V DD Serial Presence Detect Write Protect (active high). When low, the SPD can be written as well as read. VCMOS A35, B35, A37, B37 CMOS I/O V oltage. Us ed for signals CMD, SCK, SIN, SOUT. Vdd A41, A42, A54, A58, B41, B42, B54, B58 Supply voltage for the RDRAM core and interface logic. Vref A51, B51 Logic threshold refe rence voltage for RSL signals. Signal Pins I/O Type Description

Page 5 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 SIO0 SIO1 SCK CMD Vref RDRAM Device(256/288Mb) RDQA8 RDQA7 RDQA6 RDQA5 RDQA4 RDQA3 RDQA2 RDQA1 RDQA0 RCFM RCFMN RCTM RCTMN RROW2 RROW1 RROW0 RCOL4 RCOL3 RCOL2 RCOL1 RCOL0 RDQB0 RDQB1 RDQB2 RDQB3 RDQB4 RDQB5 RDQB6 RDQB7 RDQB8 LDQA8 LDQA7 LDQA6 LDQA5 LDQA4 LDQA3 LDQA2 LDQA1 LDQA0 LCFM LCFMN LCTM LCTMN LROW2 LROW1 LROW0 LCOL4 LCOL3 LCOL2 LCOL1 LCOL0 LDQB0 LDQB1 LDQB2 LDQB3 LDQB4 LDQB5 LDQB6 LDQB7 LDQB8 SIN LSCK LCMD VREF SOUT RSCK RCMD Vdd Gnd 2 per RDRAM device SCL SDA A0 A1 SCL SA0 SA1 SDA Serial Presence Detect Note 1. Rambus Channel signals form a loop through the RIMM module, with the exception of the SIO chain. DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 SIO0 SIO1 SCK CMD Vref RDRAM Device(256/288Mb) DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 SIO0 SIO1 SCK CMD Vref RDRAM Device(256/288Mb) DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 SIO0 SIO1 SCK CMD Vref RDRAM Device(256/288Mb) VREF Gnd 1 per

2 RDRAM devices

0.22/0.1µFa 0.22/0.1µFa 0.22/0.1µFa SVDD Gnd Plus one Near Connector 47KΩ UN Note 2. See Serial Presence Detection Specification for information on the SPD device and its contents. Module Capacity N 512/576MB 16 256/288MB 8 128/144MB 4 64/72MB 2 0.22/0.1µFa a . ∗ 0.1 µF : 800MHz products for 64/72MB, 128/144MB and 256/288MB ∗ 0.22 µF : the other products Figure 2: RIMM Module Functional Diagram

Page 6 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Absolute Maximum Ratings DC Recommended Electrical Conditions Table 4: Absolute Maximum Ratings Symbol Parameter Min Max Unit VI,ABS V oltage applied to any RSL or CMOS signal pad with respect to Gnd - 0.3 V DD + 0.3 V VDD,ABS V oltage on VDD with respect to Gnd - 0.5 V DD + 1.0 V TSTORE Storage temperature - 50 100 °C TPLATE Plate temperature - 92 °C Table 5: DC Recommended Electrical Conditions Symbol Parameter and Conditions Min Max Unit VDD Supply voltage 2.50 - 0.13 2.50 + 0.13 V VCMOS CMOS I/O power supply at pad for 2.5V controllers: CMOS I/O power supply at pad for 1.8V controllers: VDD 1.8 - 0.1 VDD 1.8 + 0.2 V V VREF Reference voltage 1.4 - 0.2 1.4 + 0.2 V VSPD Serial Presence Detector- Positive power supply 2.2 3.6 V Table 6: RIMM Module Capacity and Number of RDRAM device RIMM Module Capacity: 512/576MB 256/288MB 128/144MB 64/72MB Number of 256/288Mb RDRAM devices 16 8 4 2

Page 7 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 RIMM Module Current Profile Table 7: RIMM Module Current Profile IDD RIMM Module Capacity 512/576MB 256/288MB 128/144MB 64/72MB Unit Number of 256/288Mb RDRAM devices 1 6 842 RIMM Module power conditions a Freq Max Max Max Max IDD1 One RDRAM device in Readb, balance in NAP mode -1066 710/760c 678/728 662/712 654/704 mA -800 590/620 558/588 542/572 534/564 IDD2 One RDRAM device in Readb, balance in Standby mode -1066 2150/2200 1350/1400 950/1000 750/800 mA -800 1730/1760 1090/1120 770/800 610/640 IDD3 One RDRAM device in Readb, balance in Active mode -1066 2900/2950 1700/1750 1100/1150 800/850 mA -800 2330/2360 1370/1400 890/920 650/680 IDD4 One RDRAM device in Write, balance in NAP mode -1066 790/850 758/818 742/802 734/794 mA -800 635/680 603/648 587/632 579/624 IDD5 One RDRAM device in Write, balance in Standby mode -1066 2230/2290 1430/1490 1030/1090 830/890 mA -800 1775/1820 1135/1180 815/860 655/700 IDD6 One RDRAM device in Write, balance in Active mode -1066 2980/3040 1780/1840 1180/1240 880/940 mA -800 2375/2420 1415/1460 935/980 695/740 a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current. b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the following: c. Current values represent X16(Non-Ecc) / X18(Ecc)

Page 8 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Adjusted ∆TPD Specification Table 8: AC Electrical Specifications Symbol Parameter and Conditions Min Typ Max Unit ZL Module Impedance of RSL Signals 25.2 28 30.8 Ω ZUL-CMOS Module Impedance of SCK and CMOS signals 23.8 28 32.2 Ω TPD Propagation Delay variation of RSL signals. Average clock delay from finger to finger of all RSL clock nets (CTM, CTMN, CFM and CFMN) - See Table10 a,b ns ∆TPD Propagation delay variation of RSL signals with respect to TPD b,c for 2, 4 and 8 device modules -21 21 ps Propagation delay variation of RSL signals with respect to TPD b,c for 16 device modules -24 24 ps ∆TPD-CMOS Propagation delay variation of SCK signals with respect to an average clock delay -250 250 ps ∆TPD-SCK,CMD Propagation delay variation of CMD signals with respect to SCK signal -200 200 ps Vα/VIN Attenuation Limit See Table10a % VXF/VIN Forward crosstalk coefficient (300ps input rise time @ 20%-80%) See Table10a % VXB/VIN Backward crosstalk coefficient (300ps input rise time @ 20%- 80%) See Table10a % a. Table 10 lists parameters and specifications for different storage capacity RIMM Modules that use 256Mb or 288Mb RDRAM devices. b. TPD or Average clock delay is defined as the delay from finger to finger of RSL signal. c. If the RIMM module meets the following specification, then it is compliant to the specification. If the RIMM module does not meet these specifica tions, then the specification can be adjusted by the “Adjusted ∆TPD Specification“ table 9 below. Table 9: Adjusted ∆TPD Specification Symbol Parameter and Condi tions Adjusted Min/Max Absolute Min / Max Unit ∆TPD Propagation delay variation of RSL signals with respect to TPD for 2, 4 and 8 device modules +/-[20+(18*N*∆Z0)]a -30 30 ps Propagation delay variation of RSL signals with respect to TPD for 16 device modules +/-[24+(18*N*∆Z0)]a -50 50 ps a. Where: N = Number of RDRAM devices installed on the RIMM module ∆Z0 = delta Z0% = (max Z0 - min Z0)/(min Z0) (max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)

Page 9 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Table 10: AC Electrical Specifications for RIMM Modules Symbol RIMM Module Capacity 512/576MB 256/288MB 128/144MB 64/72MB UnitNumber of 256/288Mb RDRAM devices 16 8 4 2 Parameter and Condition for RIMM Modules Freq. Max Max Max Max TPD Propagation Delay, all RSL signals -1066 2.11 1.56 1.56 1.56 ns -800 2.11 1.56 1.56 1.56 Vα/VIN Attenuation Limit -1066 27.0 17.0 17.0 17.0 -800 25.0 16.0 16.0 16.0 VXF/VIN Forward crosstalk coefficient (300ps input rise time @ 20%-80%) -1066 8.0 4.0 4.0 4.0 -800 8.0 4.0 4.0 4.0 VXB/VIN Backward crosstalk coefficient (300ps input rise time @ 20%-80%) -1066 2.5 2.0 2.0 2.0 -800 2.5 2.0 2.0 2.0 RDC DC Resistance Limit -1066 1.2 0.8 0.6 0.6 Ω -800 1.2 0.8 0.6 0.6

Page 10 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Figure 3: 256Mb/288Mb base RIMM Module PCB Physical Dimensions Physical Dimensions -1 ( For PCB ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 45.00[1.772] 1.00[0.039] 5.68[0.2236] 31.75[1.25] 7.468[0.294] 4.50[0.177] A-1 A-92DETAIL A DETAIL B B-1 0.80±0.10 [0.031±0.004] DETAIL A 3.00±0.10 2.00±0.10 DETAIL B [0.12±0.004] [0.079±0.004] Min.4.88 [0.192] R 1.00 1.00[0.039] R 2.00 COMPONENT AREA (A SIDE) DIA 2.44 120.65[4.75] COMPONENT AREA (B SIDE) 4.00±0.15 [0.157±0.006] 29.21[1.15] 17.78[0.700] Note : The gray area above represents the contact surface of the heat spreader. + + Min.6.35[0.25] Heat spreader B-92 8.60[0.339] 45.00[1.772] 1.00[0.039] 5.68[0.2236] 31.75[1.25] 7.468[0.294] 4.50[0.177] A-1 A-92DETAIL A DETAIL B B-1 0.80±0.10 2.99±0.05 [0.031±0.004] [0.12±0.002] DETAIL A 3.00±0.10 2.00±0.10 DETAIL B [0.12±0.004] [0.079±0.004] Min.4.88 [0.192] R 1.00 1.00[0.039] R 2.00 COMPONENT AREA (A SIDE) DIA 2.44 120.65[4.75] COMPONENT AREA (B SIDE) 4.00±0.15 [0.157±0.006] 29.21[1.15] 17.78[0.700] Note : The gray area above represents the contact surface of the heat spreader. + + Min.6.35[0.25] Heat spreader B-92 8.60[0.339]

Page 11 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Figure 4: 256Mb/288Mb base RIMM Module PCB Physical Dimensions Physical Dimensions -2 ( For PCB ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 45.00[1.772] 1.00[0.039] 5.68[0.2236] 34.93[1.375] 7.468[0.294] 4.50[0.177] A-1 A-92DETAIL A DETAIL B B-1 0.80±0.10 [0.031±0.004] DETAIL A 3.00±0.10 2.00±0.10 DETAIL B [0.12±0.004] [0.079±0.004] Min.4.88 [0.192] R 1.00 1.00[0.039] R 2.00 COMPONENT AREA (A SIDE) DIA 2.44 120.65[4.75] COMPONENT AREA (B SIDE) 4.00±0.15 [0.157±0.006] 29.21[1.15] 17.78[0.700] Note : The gray area above represents the contact surface of the heat spreader. + + Min.6.35[0.25] Heat spreader B-92 8.60[0.339]

Page 12 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Physical Dimensions -3 ( For Heat Spreader ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. WARNING ! HOT SURFACE http://www.samsungsemi.com 2.9 1.00±0.07 [0.04±0.002] WARNING ! HOT SURFACE http://www.samsungsemi.com 26.54[1.045] 26.54[1.045] Center-Point [0.114] 31.75[1.25] 13.7[0.539] A A Material CSP 1.27±0.10 [0.050±0.004] Thermal Conductive Gap Filling Max 7.80 [0.307] PCB Heat Spreader [ Double side module ] SECTION A-A Material CSP 1.27±0.10 [0.050±0.004] Thermal Conductive Gap Filling Max 4.70 [0.185] PCB Heat Spreader [ Single side module ] SECTION A-A Figure 5: Heat Spreader Physical Dimensions

Page 13 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Physical Dimensions -4 ( For Heat Spreader ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. WARNING ! HOT SURFACE http://www.samsungsemi.com 2.9 1.00±0.07 [0.04±0.002] WARNING ! HOT SURFACE http://www.samsungsemi.com 29.42[1.158] 29.42[1.158] Center-Point [0.114] 34.93[1.375] 16.5[0.649] A A Material CSP 1.27±0.10 [0.050±0.004] Thermal Conductive Gap Filling Max 7.80 [0.307] PCB Heat Spreader [ Double side module ] SECTION A-A Material CSP 1.27±0.10 [0.050±0.004] Thermal Conductive Gap Filling Max 4.70 [0.185] PCB Heat Spreader [ Single side module ] SECTION A-A Figure 6: Heat Spreader Physical Dimensions

Page 14 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Standard RIMM Module Marking The RIMM modules available from Samsung are marked like Figure 7 below. This marking also assists users to specify and verify if the correct RIMM modules are installed in their systems. In the diagram, a label is shown attached to the RIMM module’s heat spreader. Information contained on the label is specific to the RIMM module and provides RDRAM device information without requiring removal of the RIMM module’s heat spreader. Label Field Description Marked Text Unit A Vendor Logo RIMM Module Vendor SAMSUNG Logo Area SAMSUNG - B Country Country of origin KOREA - C Year & Week code Manufactured Year & Week code yyww - D Module Memory Capacity Number of 8-bit or 9-bit MBytes of RDRAM storage in RIMM module 64MB, 128MB, 256MB, 512MB - E Number of RDRAM devices Number of RDRAM devices contained in the RIMM module 2/4/8/16 RDRAM devices F ECC Support Indicates whether the RIMM module supports 8 (non ECC) or 9 (ECC) bit Bytes blank = 8 bit Bytes ECC = 9 bit Bytes - G Notice! Hot surface caution notice. - - H Caution Logo ISO Standard - - I Gerber & SPD Version PCB Gerber file & SPD code version used on RIMM Module Gerber : 10 = 1.0 ver. 01 = 0.1 ver. SPD : 2 = 1.3 ver. J tRAC Row Access Time -32P, -32, -35, -40, -45 ns K Memory Speed Data transfer speed for RDRAM devices 1066, 800 MHz L Part No. SAMSUNG RIMM Module part No. See Table 1 - MR16R162GDF0-CT9 1066-32P 102 KOREA 0230 512MB /16 A B C D E F G L J HK I Figure 7: RIMM Module Marking Example

Page 15 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Table Of Contents Physical Dimensions -3, -4 ( For Heat Spreader) . . . 12 - 13 Copyright © July 2002, Samsung Electronics. All rights reserved. Direct Rambus, Direct RDRAM and SO-RIMM are trade- marks of Rambus Inc. Rambus, RDRAM, RIMM and the Rambus Logo are registered trademarks of Rambus Inc. This document contains advanced information that is subject to change by Samsung Electronics without notice Document Version 1.0 Samsung Electronics Co. Ltd. San #16 Banwol-ri, Taean-Eup Hwasung-City, Gyeonggi-Do, KOREA Telephone: 82-31-208-6369 Fax: 82-31-208-6799 http://www.intl.samsungsemi.com