MPQ3798 CENTRAL | Alldatasheet
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(SEE REVERSE SIDE) MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: (TA=25°C) S Y M B O L MPQ3798 MPQ3799 UNITS Collector-Base Voltage V CBO 60 60 V Collector-Emitter Voltage V CEO 40 60 V Emitter-Base Voltage V EBO 5.0 V Collector Current I C 5 0 m A Power Dissipation (Each Transistor) P D 500 mW Power Dissipation (Total Package) P D 900 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance (Total Package) ΘJA 139 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) MPQ3798 MPQ3799 SYMBOL TEST CONDITIONS M I N MAX MIN MAX UNITS ICBO V CB=50V 10 10 nA IEBO V EB=3.0V 20 20 nA BVCBO I C=10µA 60 60 V BVCEO I C=10mA 40 60 V BVEBO I E=10µA 5.0 5.0 V VCE(SAT) I C=100µA, IB=10µA 0.2 0.2 V VCE(SAT) I C=1.0mA, IB=100µA 0.25 0.25 V VBE(SAT) I C=100µA, IB=10µA 0.7 0.7 V VBE(SAT) I C=1.0mA, IB=100µA 0.8 0.8 V hFE V CE=5.0V, IC=10µA 100 225 hFE V CE=5.0V, IC=100µA 150 300 hFE V CE=5.0V, IC=500µA 150 300 hFE V CE=5.0V, IC=10mA 125 250 fT V CE=5.0V, IC=1.0mA, f=100MHz 60 60 MHz Cob V CB=5.0V, IE=0, f=1.0MHz 4.0 4.0 pF Cib V EB=0.5V, IC=0, f=1.0MHz 8.0 8.0 pF NF V CE=10V, IC=100µA, RS=3kΩ, f=10Hz to 15.7kHz 2.5 TYP 1.5 TYP dB
MPQ3798 / MPQ3799 PNP SILICON QUAD TRASISTOR TO-116 CASE - MECHANICAL OUTLINE .220(5.59) .280(7.11) MAXIMUM .325(8.26) 15° .008(0.20) .015(0.38) .785(19.94) .660(16.76) MAXIMUM .200(5.08) .015(0.38) .023(0.58) .030(0.76) .310(7.87) MINIMUM .020(0.51) .100(2.54) MINIMUM .090(2.29) .110(2.79) .190(4.83) .210(5.33) All Dimensions in Inches (mm). PIN CONFIGURATION Q Q Q Q CCBE EB CCBE EB