MMVL809T1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. MMVL809T1–1/2 PLASTIC, CASE 477 SOD– 323 ANODE CATHODE MAXIMUM RATINGS Symbol Rating V alue Unit V R Continuous Reverse Voltage 20 Vdc IF Peak Forward Current 20 mAdc THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR–5 Board,* 200 mW TA = 25°C Derate above 25°C 1.57 mW/°C RθJA Thermal Resistance Junction to Ambient 635 °C/W TJ, Tstg Junction and Storage T emperature 150 °C *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse BreakdownVoltage V (BR)R 20 — — Vdc (IR = 10 µAdc) Reverse Voltage Leakage Current I R — — 50 nAdc (VR = 15 Vdc) C t, Diode Capacitance Q, Figure of Merit C R , Capacitance Ratio VR = 2.0 Vdc, f = 1.0 MHz V R = 3.0 Vdc C 3/C8 pF f = 500 MHz f = 1.0 MHz(1) Device Min Nom Max Min Min Max 1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ratio Surface Mount Package Available in 8 mm Tape and Reel Device Marking: 5K MMVL809T1 4.5 – 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE Silicon Tuning Diode
ORDERING INFORMATION
MMVL809T1 SOD–323 3000 / Tape & Reel